VS-ST180C08C0 Vishay Semiconductors, VS-ST180C08C0 Datasheet - Page 3
![no-image](/images/manufacturer_photos/0/6/698/vishay_semiconductors_sml.jpg)
VS-ST180C08C0
Manufacturer Part Number
VS-ST180C08C0
Description
SCR Modules 800 Volt 350 Amp
Manufacturer
Vishay Semiconductors
Datasheet
1.VS-ST180C08C0.pdf
(8 pages)
Specifications of VS-ST180C08C0
Product Category
SCR Modules
Rohs
yes
On-state Rms Current (it Rms)
660 A
Non Repetitive On-state Current
5000 A
Breakover Current Ibo Max
5230 A
Rated Repetitive Off-state Voltage Vdrm
800 V
Off-state Leakage Current @ Vdrm Idrm
30 mA
On-state Voltage
1.96 V
Holding Current (ih Max)
600 mA
Gate Trigger Voltage (vgt)
3 V
Gate Trigger Current (igt)
150 mA
Maximum Operating Temperature
+ 125 C
Mounting Style
Chassis
Package / Case
TO-200AB (A-PUK)
Circuit Type
SCR
Current Rating
350 A
Minimum Operating Temperature
- 40 C
Factory Pack Quantity
12
Note
• The table above shows the increment of thermal resistance R
Document Number: 94396
Revision: 11-Aug-08
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
Maximum thermal resistance,
case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
ΔR
CONDUCTION ANGLE
thJC
CONDUCTION
180°
120°
90°
60°
30°
SINGLE SIDE
0.015
0.018
0.024
0.035
0.060
CONDUCTION
SINUSOIDAL
For technical questions, contact: ind-modules@vishay.com
(Hockey PUK Version), 350 A
SYMBOL
SYMBOL
R
R
P
+ V
- V
P
V
T
V
thC-hs
Phase Control Thyristors
I
DOUBLE SIDE
G(AV)
I
I
thJ-hs
T
GM
GD
GT
GM
Stg
GD
GT
GM
J
GM
0.015
0.019
0.024
0.035
0.060
T
T
T
T
T
T
T
T
T
T
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
See dimensions - link at the end of datasheet
J
J
J
J
J
J
J
J
J
J
thJC
= T
= T
= T
= T
= - 40 °C
= 25 °C
= 125 °C
= - 40 °C
= 25 °C
= 125 °C
J
J
J
J
when devices operate at different conduction angles than DC
maximum
maximum, t
maximum, f = 50 Hz, d% = 50
maximum, t
SINGLE SIDE
0.011
0.019
0.026
0.036
0.060
RECTANGULAR
TEST CONDITIONS
TEST CONDITIONS
CONDUCTION
p
p
Maximum required gate trigger/
current/voltage are the lowest value
which will trigger all units 12 V
anode to cathode applied
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated V
applied
≤ 5 ms
≤ 5 ms
DOUBLE SIDE
DRM
Vishay High Power Products
0.011
0.019
0.026
0.037
0.061
anode to cathode
ST180CPbF Series
TEST CONDITIONS
T
J
= T
J
maximum
TYP.
180
TO-200AB (A-PUK)
2.9
1.8
1.2
- 40 to 125
- 40 to 150
90
40
VALUES
VALUES
0.033
0.017
(500)
4900
0.25
0.17
0.08
2.0
3.0
5.0
10
20
10
50
www.vishay.com
MAX.
150
3.0
-
-
-
-
UNITS
UNITS
UNITS
K/W
K/W
(kg)
mA
mA
°C
W
N
A
V
V
V
g
3