SMBJ12CA R4 Taiwan Semiconductor, SMBJ12CA R4 Datasheet - Page 2
![no-image](/images/manufacturer_photos/0/6/647/taiwan_semiconductor_sml.jpg)
SMBJ12CA R4
Manufacturer Part Number
SMBJ12CA R4
Description
TVS Diodes - Transient Voltage Suppressors 12V 600W 5% Bidir
Manufacturer
Taiwan Semiconductor
Datasheet
1.SMBJ30A_R4.pdf
(7 pages)
Specifications of SMBJ12CA R4
Product Category
TVS Diodes - Transient Voltage Suppressors
Rohs
yes
Polarity
Unidirectional
Operating Voltage
12 V
Breakdown Voltage
13.3 V
Clamping Voltage
19.9 V
Peak Surge Current
100 A
Package / Case
DO-214AA
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Channels
1 Channel
Dimensions
3.73(Max) mm W x 4.75(Max) mm L
Peak Pulse Power Dissipation
600 W (Min)
Part # Aliases
R4 SMBJ12CA
140
120
100
100000
100
0.1
80
60
40
20
10
10000
0
1000
1
100
0.1
0
10
1
TA=25℃
f=1.0MHz
Vsig=50mVp-p
0.5
td
FIG. 1 PEAK PULSE POWER RATING CURVE
FIG. 5 TYPICAL JUNCTION CAPACITANCE
tr=10usec
1
FIG. 3 CLAMPING POWER PULSE WAVEFORM
Peak Value
IPPM
1
V(
tp, PULSE WIDTH, (uS)
BR
), BREAKDOWN VOLTAGE (V)
1.5
10
PULSE WIDTH(td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS to 50% OF IPPM
t, TIME ms
VR-RATED
STAND-OFF
VOLTAGE
RATINGS AND CHARACTERISTIC CURVES (SMBJ SERIES)
2
Half Value-IPPM/2
10/1000usec, WAVEFORM
as DEFINED by R.E.A.
10
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG.3
TA = 25℃
100
2.5
VR=0
1000
3
3.5
10000
100
4
125
100
100
75
50
25
10
0
0
1
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE
25
50
FIG.2 PULSE DERATING CURVE
T
A
, AMBIENT TEMPERATURE (
NUMBER OF CYCLES AT 60 Hz
75
CURRENT
100
10
8.3mS Single Half Sine Wave
JEDEC Method
UNIDIRECTIONAL ONLY
125
Version:I13
150
o
C)
175
200
100