VS-VSKH105/14 Vishay Semiconductors, VS-VSKH105/14 Datasheet - Page 6

• Manufacturer Part Number: VS-VSKH105/14
• Description: SCR Modules 1400 Volt 105 Amp 2094 Amp IFSM
• Manufacturer: Vishay Semiconductors

Specifications of VS-VSKH105/14

• Product Category: SCR Modules
• Rohs: yes
• On-state Rms Current (it Rms): 235 A
• Non Repetitive On-state Current: 2000 A
• Breakover Current Ibo Max: 2094 A
• Rated Repetitive Off-state Voltage Vdrm: 1.4 kV
• Off-state Leakage Current @ Vdrm Idrm: 20 mA
• On-state Voltage: 1.8 V
• Holding Current (ih Max): 250 mA
• Gate Trigger Voltage (vgt): 2.5 V
• Gate Trigger Current (igt): 150 mA
• Maximum Operating Temperature: + 130 C
• Mounting Style: Chassis
• Package / Case: ADD-A-PAK
• Circuit Type: Thyristors / Diodes
• Current Rating: 105 A
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 10

VSKT105.., VSKH105.., VSKL105.., VSKN105.. Series
Vishay Semiconductors
www.vishay.com
6
0.001
0.01
0.1
100
0.1
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10
1
0.001
0.001
1
For technical questions within your region, please contact one of the following:
Rec tangular gate pulse
a)R ec ommended load line for
b)R ec ommended load line for
rated di/ dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
<= 30% rated di/ dt: 15 V, 40 ohms
tr = 1 µs, tp >= 6 µs
VGD
Steady state value
RthJC = 0.22 °C/W
(DC operation)
IGD
Thyristor/Diode and Thyristor/Thyristor, 105 A
0.01
1000
ADD-A-PAK Generation VII Power Modules
100
Fig. 11 - Thermal Impedance Z
10
Fig. 10 - On-State Voltage Drop Characteristics
1
0.5
0.01
Instantaneous on-state voltage (V)
1.0
Per leg
Fig. 12 - Gate Characteristics
Square wave pulse duration (s)
Instantaneous gate current (A)
0.1
VSK.
IR K.105.. S eries
(b)
1.5
Tj = 25°C
Tj = 130°C
(a)
2.0
0.1
1
Per leg
2.5
thJC
Characteristics
3.0
Frequenc y Limited by PG(AV)
10
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
[e-mail]
(4)
3.5
1
(3) (2)
100
(1)
1000
10
Document Number: 94628
Revision: 17-May-10