NE3210S01-T1B-A NEC/CEL, NE3210S01-T1B-A Datasheet - Page 5

• Manufacturer Part Number: NE3210S01-T1B-A
• Description: MOSFET Super Lo Noise HJFET
• Manufacturer: NEC/CEL

Specifications of NE3210S01-T1B-A

• Rohs: yes
• Drain-source Breakdown Voltage: 4 V
• Gate-source Breakdown Voltage: - 3 V
• Continuous Drain Current: 10 mA
• Mounting Style: SMD/SMT
• Package / Case: SO-1
• Power Dissipation: 165 mW
• Factory Pack Quantity: 4000

ORDERING INFORMATION
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
OUTLINE DIMENSIONS
NE325S01-T1B
NE325S01-T1
NE325S01
NUMBER
PART
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • [phone] • Telex 34-6393 • FAX [phone]
DATA SUBJECT TO CHANGE WITHOUT NOTICE
0.125 ± 0.05
2
EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
PACKAGE OUTLINE S01
Tape & Reel 1000 pcs./reel
Tape & Reel 4000 pcs./reel
1
0.65 TYP.
SUPPLY FORM
2.0 ± 0.2
1.9 ± 0.2
4.0 ± 0.2
D
1.6
Bulk
3
0.4 MAX
(Units in mm)
4
1. Source
2. Drain
3. Source
4. Gate
PACKAGE
OUTLINE
S01
S01
S01
TYPICAL CONSTANT NOISE FIGURE
CIRCLE
TYPICAL NOISE PARAMETERS
V
DS
FREQ.
(GHz)
10
12
14
16
18
2
4
6
8
= 2 V, I
-0.2
0
0.2
D
(V
= 10 mA
NF
DS
(dB)
0.2
0.29
0.30
0.32
0.35
0.40
0.45
0.53
0.67
0.83
-0.6
0.6
MIN
= 2 V, I
(dB)
20.0
18.3
16.5
15.0
13.6
12.5
12.0
11.8
11.5
G
D
1.0
A
= 10 mA, f = 12 GHz)
0.6
opt
*
0.8
-1
1
MAG
0.93
0.80
0.65
0.49
0.36
0.27
0.24
0.30
0.47
1.0
Internet: http://WWW.CEL.COM
Γ Γ Γ Γ Γ
OPT
2.0
ANG
-176
-122
102
139
-58
14
29
48
72
2
-2
(T
-5
04/29/2002
5
A
Rn/50
= 25°C)
0.38
0.33
0.25
0.18
0.11
0.08
0.07
0.10
0.22