SI4435DY-REVA-E3 Vishay/Siliconix, SI4435DY-REVA-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4435DY-REVA-E3
• Description: MOSFET 30V 8A 2.5W
• Manufacturer: Vishay/Siliconix

Specifications of SI4435DY-REVA-E3

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8 A
• Resistance Drain-source Rds (on): 20 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 31 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.5 W
• Rise Time: 17 ns
• Typical Turn-off Delay Time: 75 ns

Document Number: 70149
S-51472—Rev. G, 01-Aug-05
0.150
0.125
0.100
0.075
0.050
0.025
0.000
50
40
30
20
10
10
0
8
6
4
2
0
0
0
0
V
GS
V
I
= 4.5 V
D
DS
= 4.6 A
On-Resistance vs. Drain Current
V
= 15 V
10
10
2
DS
Q
V
GS
– Drain-to-Source Voltage (V)
g
Output Characteristics
I
D
– Total Gate Charge (nC)
= 10 thru 5 V
– Drain Current (A)
Gate Charge
20
20
4
4 V
30
30
6
40
40
8
V
3 V
GS
= 10 V
10
50
50
4500
3600
2700
1800
900
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
40
30
20
10
0
0
–50
_
0
0
On-Resistance vs. Junction Temperature
V
I
D
C
GS
–25
= 8.0 A
rss
= 10 V
V
1
V
DS
GS
C
6
T
oss
J
Transfer Characteristics
0
– Drain-to-Source Voltage (V)
– Junction Temperature (_C)
– Gate-to-Source Voltage (V)
2
Capacitance
25
T
12
C
C
= -55°C
iss
Vishay Siliconix
50
3
18
75
Si4435DY
4
100
125°C
www.vishay.com
24
5
125
25° C
150
30
6
3