TP2104N3-P013-G Supertex, TP2104N3-P013-G Datasheet

TP2104N3-P013-G

Manufacturer Part Number

TP2104N3-P013-G

Description

MOSFET 40V 6Ohm

Manufacturer

Supertex

Datasheet

1.TP2104N3-P002-G.pdf (6 pages)

Specifications of TP2104N3-P013-G

Product Category

MOSFET

Rohs

yes

Transistor Polarity

P-Channel

Drain-source Breakdown Voltage

- 40 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

- 0.25 A

Resistance Drain-source Rds (on)

6 Ohms

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92

Fall Time

4 ns

Minimum Operating Temperature

- 55 C

Power Dissipation

0.74 W

Rise Time

4 ns

Factory Pack Quantity

2000

Typical Turn-off Delay Time

5 ns

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Features

►

Applications

►

-G indicates package is RoHS compliant (‘Green’)

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to the device may

occur. Functional operation under these conditions is not implied. Continuous operation

of the device at the absolute rating level may affect device reliability. All voltages are

referenced to device ground.

Ordering Information

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Soldering temperature*

Distance of 1.6mm from case for 10 seconds.

High input impedance and high gain

Low power drive requirement

Ease of paralleling

Low C

Excellent thermal stability

Integral source-drain diode

Free from secondary breakdown

Logic level interfaces - ideal for TTL and CMOS

Solid state relays

Analog switches

Power management

Telecom switches

Device

TP2104

ISS

and fast switching speeds

TO-236AB (SOT-23)

TP2104K1-G

●

Package Options

1235 Bordeaux Drive, Sunnyvale, CA 94089

P-Channel Enhancement Mode

Vertical DMOS FETs

-55°C to +150°C

TP2104N3-G

+300°C

Value

±20V

TO-92

DGS

DSS

General Description

This low threshold enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and with the high input

impedance and positive temperature coefﬁcient inherent

in MOS devices. Characteristic of all MOS structures,

this device is free from thermal runaway and thermally-

induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching

speeds are desired.

Pin Conﬁguration

Product Marking

Package may or may not include the following marks: Si or

●

Y Y W W

2 1 0 4

TO-92 (N3)

SOURCE

SiT P

Tel: 408-222-8888

DSS

P1LW

-40

(V)

/BV

TO-236AB (SOT-23) (K1)

DRAIN

DGS

YY = Year Sealed

WW = Week Sealed

GATE

W = Code for week sealed

TO-92 (N3)

●

= “Green” Packaging

www.supertex.com

(max)

= “Green” Packaging

DS(ON)

6.0

(Ω)

TO-236AB (SOT-23) (K1)

DRAIN

GATE

TP2104

(max)

-2.0

GS(th)

(V)

SOURCE

Related parts for TP2104N3-P013-G

TP2104N3-P013-G Summary of contents

Page 1

... Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Package Options TO-92 TP2104N3-G Pin Conﬁguration Value BV Product Marking DSS BV DGS ± ...

Page 2

... 1.0 MHz 10 6 -25V, 8 -500mA, 9 25Ω GEN 8 PULSE GENERATOR R GEN INPUT ● Tel: 408-222-8888 ● www.supertex.com TP2104 I † DR DRM (A) -0.8 -1 Max Rating = -25V DS = -50mA D = -500mA = -500mA = -500mA = -500mA = -500mA D.U.T. Output ...

Page 3

... Saturation Characteristics -2.0 -1.6 -1 -10V GS -8V -0.8 -6V -0.4 -4V - (volts) DS Power Dissipation vs. Temperature 1.0 0.8 TO-92 0.6 SOT-23 0.4 0 100 125 T (°C) A Thermal Response Characteristics 1.0 0.8 SOT-23 0 25° 0.36W D 0.4 0.2 TO- 25° 0.001 0.01 0.1 1.0 t (seconds) p ● Tel: 408-222-8888 ● www.supertex.com TP2104 -10 150 10 ...

Page 4

... On-Resistance vs. Drain Current -4. -10V -0.4 -0.8 -1.2 -1.6 I (amperes and R Variation with Temperature GS(th) DS(ON) 1 -10V, -0.5A DS(ON) 1.1 1 -1mA GS(th) 0.9 0.8 0.7 - 100 T ° Gate Drive Dynamic Characteristics - -10V -40V DS 125 1.5 0 0.5 1.0 2.0 Q (nanocoulombs) G ● Tel: 408-222-8888 ● www.supertex.com TP2104 -2.0 1.6 1.4 1.2 1.0 0.8 150 2.5 ...

Page 5

... Top View Side View Symbol A A1 MIN 0.89 0.01 Dimension NOM - (mm) MAX 1.12 0.10 JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. † This dimension is a non-JEDEC dimension. Drawings not to scale. Supertex Doc.#: DSPD-3TO236ABK1, Version B072208 0.88 0.30 2.80 2.10 - 0.95 - 2.90 - 1.02 0.50 3.04 2.64 ● ...

Page 6

... Supertex Doc.#: DSPD-3TO92N3, Version D080408. Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship ...

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