SI4943DY-E3 Vishay/Siliconix, SI4943DY-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4943DY-E3
• Description: MOSFET 20V 8.4A 2W
• Manufacturer: Vishay/Siliconix

Specifications of SI4943DY-E3

• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.3 A
• Resistance Drain-source Rds (on): 19 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 24 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.1 W
• Rise Time: 24 ns
• Factory Pack Quantity: 100
• Typical Turn-off Delay Time: 56 ns

Si4943DY
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
- 0.2
- 0.4
0.8
0.6
0.4
0.2
0.0
0.01
0.01
0.1
0.1
- 50
2
1
2
1
10
10
-4
-4
Single Pulse
- 25
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0
T
Threshold Voltage
J
- Temperature (_C)
25
10
-3
50
10
I
D
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 mA
Normalized Thermal Transient Impedance, Junction-to-Foot
75
10
100
-2
125
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
150
10
New Product
-2
10
-1
10
1
-1
50
40
30
20
10
0
10
-2
10
10
-1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
Single Pulse Power
- T
t
1
A
Time (sec)
1
= P
1
t
2
DM
Z
thJA
thJA
100
t
t
1
2
S-21192—Rev. B, 29-Jul-02
(t)
Document Number: 71682
10
= 85_C/W
100
600
10
600