SIA513DJ-T1-E3 Vishay/Siliconix, SIA513DJ-T1-E3 Datasheet - Page 7
![no-image](/images/no-image-200.jpg)
SIA513DJ-T1-E3
Manufacturer Part Number
SIA513DJ-T1-E3
Description
MOSFET 20V 4.5A 6.5W
Manufacturer
Vishay/Siliconix
Datasheet
1.SIA513DJ-T1-E3.pdf
(14 pages)
Specifications of SIA513DJ-T1-E3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N and P-Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.5 A
Resistance Drain-source Rds (on)
60 mOhms, 110 mOhms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK SC-70-6 Dual
Fall Time
40 ns at N Channel, 45 ns at P Channel
Minimum Operating Temperature
- 55 C
Power Dissipation
6.5 W
Rise Time
40 ns at N Channel, 45 ns at P Channel
Factory Pack Quantity
3000
Typical Turn-off Delay Time
20 ns at N Channel, 15 ns at P Channel
Part # Aliases
SIA513DJ-E3
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIA513DJ-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 70443
S-80437-Rev. B, 03-Mar-08
0.01
0.01
0.1
1
1
10
10
0.02
-4
-4
0.05
Duty Cycle = 0.5
0.2
0.1
0.1
Duty Cycle = 0.5
Single Pulse
0.2
Single Pulse
0.02
0.05
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
10
-3
New Product
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
1
10
-2
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
= P
t
2
Vishay Siliconix
DM
100
Z
th JA
th JA
t
t
1
2
SiA513DJ
(t)
= 85 °C/W
www.vishay.com
1000
10
-1
7