NDS0610_D87Z Fairchild Semiconductor, NDS0610_D87Z Datasheet - Page 3

• Manufacturer Part Number: NDS0610_D87Z
• Description: MOSFET P-Channel FET Enhancement Mode
• Manufacturer: Fairchild Semiconductor

Specifications of NDS0610_D87Z

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 0.12 A
• Resistance Drain-source Rds (on): 1 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23-3
• Fall Time: 6.3 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.36 W
• Rise Time: 6.3 ns
• Factory Pack Quantity: 10000
• Typical Turn-off Delay Time: 10 ns

Typical Characteristics
1.4
1.2
0.8
0.6
0.4
0.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
1.2
0.8
0.6
0.4
0.2
Figure 3. On-Resistance Variation with
1
0
1
1
0
Figure 1. On-Region Characteristics.
-50
0
1
Figure 5. Transfer Characteristics.
V
V
I
V
D
GS
DS
GS
-6.0V
= -0.5A
-25
= -10V
=-10V
= -10V
1.5
1
-V
-V
T
DS
0
GS
J
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
Temperature.
, GATE TO SOURCE VOLTAGE (V)
2
-4.5V
2
25
2.5
-4.0V
3
50
T
A
= -55
3
75
o
C
-3.5V
4
3.5
o
100
C)
125
o
C
-3.0V
5
25
125
4
-2.5V
o
C
150
4.5
6
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.01
0.1
2.2
1.8
1.6
1.4
1.2
0.8
10
Figure 2. On-Resistance Variation with
5
4
3
2
1
0
Figure 4. On-Resistance Variation with
1
with Source Current and Temperature.
2
1
0.2
2
0
V
V
T
Drain Current and Gate Voltage.
GS
GS
A
= 25
=-3.0V
= 0V
0.2
o
Gate-to-Source Voltage.
C
-V
0.4
SD
-3.5V
T
, BODY DIODE FORWARD VOLTAGE (V)
-V
4
A
GS
= 125
0.4
, GATE TO SOURCE VOLTAGE (V)
-4.0V
-I
T
D
A
o
, DRAIN CURRENT (A)
C
= 125
0.6
0.6
o
-4.5V
C
25
6
o
C
0.8
0.8
-6.0V
-55
o
C
1
8
-10V
1
NDS0610 Rev B(W)
I
D
1.2
= -0.25A
1.4
1.2
10