SI4864DY-E3 Vishay/Siliconix, SI4864DY-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4864DY-E3
• Description: MOSFET 20V 25A 3.5W
• Manufacturer: Vishay/Siliconix

Specifications of SI4864DY-E3

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 17 A
• Resistance Drain-source Rds (on): 3.5 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 44 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.6 W
• Rise Time: 44 ns
• Factory Pack Quantity: 100
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 150 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71449
S09-0221-Rev. C, 09-Feb-09
0.005
0.004
0.003
0.002
0.001
0.000
60
10
5
4
3
2
1
0
1
0
0
0
V
I
Source-Drain Diode Forward Voltage
D
DS
10
= 25 A
0.2
On-Resistance vs. Drain Current
12
= 10 V
V
SD
Q
T
J
g
- Source-to-Drain Voltage (V)
= 150 °C
0.4
- Total Gate Charge (nC)
20
I
D
- Drain Current (A)
Gate Charge
24
0.6
30
36
T
0.8
40
J
= 25 °C
V
V
GS
GS
48
= 2.5 V
1.0
50
= 4.5 V
1.2
60
60
0.010
0.008
0.006
0.004
0.002
0.000
7500
6000
4500
3000
1500
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
- 25
rss
V
I
D
1
GS
= 25 A
= 4.5 V
4
V
V
GS
DS
0
T
2
J
C
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
oss
25
Capacitance
3
8
I
D
C
50
= 25 A
Vishay Siliconix
iss
4
12
75
5
Si4864DY
www.vishay.com
100
6
16
125
7
150
20
8
3