VN0550N3-P003-G Supertex, VN0550N3-P003-G Datasheet - Page 4

• Manufacturer Part Number: VN0550N3-P003-G
• Description: MOSFET 500V 60Ohm
• Manufacturer: Supertex

Specifications of VN0550N3-P003-G

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 mA
• Resistance Drain-source Rds (on): 60 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1 W
• Factory Pack Quantity: 2000
• Typical Turn-off Delay Time: 10 ns

Typical Performance Curves
100
75
50
25
1.1
1.0
0.9
0.5
0.4
0.3
0.2
0.1
0
0
-50
Supertex inc.
0
Capacitance vs. Drain-to-Source Voltage
0
V
DS
BV
= 25V
DSS
2.0
Transfer Characteristics
10
Variation with Temperature
0
4.0
V
V
DS
T
GS
j
(volts)
(
(volts)
20
50
O
C)
6.0
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
30
8.0
f = 1MHz
(cont.)
C
C
RSS
ISS
150
10
40
4
100
1.4
1.2
1.0
0.8
0.6
8.0
6.0
4.0
2.0
80
60
40
20
10
0
0
-50
0
0
V
(th)
Gate Drive Dynamic Characteristics
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On-Resistance vs. Drain Current
and R
0.2
0.1
V
GS
0
50 pF
DS
= 5.0V
Q
Variation with Temperature
G
(nanocoulombs)
I
0.4
0.2
D
R
(amperes)
DS(ON)
T
j
(
50
O
V
C)
@ 10V, 50mA
(th)
112 pF
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0.3
0.6
@ 1.0mA
105 pF
V
V
DS
GS
V
DS
100
= 40V
= 10V
= 10V
0.4
0.8
150
0.5
1.0
VN0550
1.8
1.4
1.0
0.6
0.2