AT28HC256E-12UM/883 Atmel, AT28HC256E-12UM/883 Datasheet - Page 9

IC EEPROM 256KBIT 120NS 28PGA

AT28HC256E-12UM/883

Manufacturer Part Number
AT28HC256E-12UM/883
Description
IC EEPROM 256KBIT 120NS 28PGA
Manufacturer
Atmel
Datasheet

Specifications of AT28HC256E-12UM/883

Format - Memory
EEPROMs - Parallel
Memory Type
EEPROM
Memory Size
256K (32K x 8)
Speed
120ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-55°C ~ 125°C
Package / Case
28-PGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
AT28HC256E12UM883
16. Page Mode Write Characteristics
17. Page Mode Write Waveforms
Notes:
18. Chip Erase Waveforms
0007N–PEEPR–9/09
Symbol
t
t
t
t
t
t
t
t
WC
AS
AH
DS
DH
WP
BLC
WPH
1. A6 through A14 must specify the same page address during each high to low transition of WE (or CE).
2. OE must be high only when WE and CE are both low.
Parameter
Write Cycle Time (option available)
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Write Pulse Width
Byte Load Cycle Time
Write Pulse Width High
(1)(2)
t
t
V
S
W
H
AT28HC256
AT28HC256F
= t
= 10 msec (min.)
= 12.0V ± 0.5V
H
= 5 µsec (min.)
Min
100
50
50
50
0
0
Typ
5
2
AT28HC256
Max
150
10
3
Units
ms
ms
ns
ns
ns
ns
ns
µs
ns
9

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