AT28C010E-12DM/883 Atmel, AT28C010E-12DM/883 Datasheet

IC EEPROM 1MBIT 120NS 32CDIP

AT28C010E-12DM/883

Manufacturer Part Number
AT28C010E-12DM/883
Description
IC EEPROM 1MBIT 120NS 32CDIP
Manufacturer
Atmel
Datasheet

Specifications of AT28C010E-12DM/883

Format - Memory
EEPROMs - Parallel
Memory Type
EEPROM
Memory Size
1M (128K x 8)
Speed
120ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-55°C ~ 125°C
Package / Case
32-CDIP (0.600", 15.24mm) Window
Organization
128 K x 8
Interface Type
Parallel
Access Time
120 ns
Output Enable Access Time
50 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Maximum Operating Current
80 mA
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Operating Supply Voltage
5 V
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
AT28C010E-12DM883

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT28C010E-12DM/883
Manufacturer:
ATMEL
Quantity:
467
Part Number:
AT28C010E-12DM/883
Manufacturer:
AMD
Quantity:
550
Part Number:
AT28C010E-12DM/883
Manufacturer:
ATMEL
Quantity:
556
Features
Pin Configuration
Pin Name
A0 - A16
CE
OE
WE
I/O0 - I/O7
NC
Fast Read Access Time - 120 ns
Automatic Page Write Operation
Fast Write Cycle Time
Low Power Dissipation
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-Wide Pinout
CERDIP, FLATPACK
GND
I/O0
I/O1
I/O2
A16
A15
A12
NC
– Internal Address and Data Latches for 128-Bytes
– Internal Control Timer
– Page Write Cycle Time - 10 ms Maximum
– 1 to 128-Byte Page Write Operation
– 80 mA Active Current
– 300 µA CMOS Standby Current
– Endurance: 10
– Data Retention: 10 Years
A7
A6
A5
A4
A3
A2
A1
A0
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
4
or 10
5
A12
NC
NC
NC
Cycles
A7
A6
A5
A4
A3
A2
A1
7
8
9
10
11
12
13
14
15
16
17
Top View
44 LCC
39
38
37
36
35
34
33
32
31
30
29
A13
A8
A9
A11
NC
NC
NC
NC
OE
A10
CE
I/O0
A7
A6
A5
A4
A3
A2
A1
A0
5
6
7
8
9
10
11
12
13
Top View
Top View
32 LCC
PGA
(continued)
29
28
27
26
25
24
23
22
21
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
AT28C010 Mil
1-Megabit
(128K x 8)
Paged Parallel
EEPROMs
AT28C010
Military
0010F–PEEPR–02/10

Related parts for AT28C010E-12DM/883

AT28C010E-12DM/883 Summary of contents

Page 1

Features • Fast Read Access Time - 120 ns • Automatic Page Write Operation – Internal Address and Data Latches for 128-Bytes – Internal Control Timer • Fast Write Cycle Time – Page Write Cycle Time - 10 ms Maximum ...

Page 2

... The AT28C010 is a high-performance Electrically Erasable and Programmable Read Only Mem- ory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with power dissipation of just 440 mW. When the device is deselected, the CMOS standby current is less than 300 μ ...

Page 3

... DATA PROTECTION: If precautions are not taken, inadvertent writes may occur during transi- tions of the host system power supply. Atmel has incorporated both hardware and software fea- tures that will protect the memory against inadvertent writes. HARDWARE PROTECTION: Hardware features protect against inadvertent writes to the AT28C010 in the following ways: ( inhibited ...

Page 4

... DEVICE IDENTIFICATION: An extra 128-bytes of EEPROM memory are available to the user for device identification. By raising A9 to 12V ± 0.5V and using address locations 1FF80H to 1FFFFH the bytes may be written to or read from in the same manner as the regular memory array. OPTIONAL CHIP ERASE MODE: The entire device can be erased using a 6-byte software code ...

Page 5

DC Characteristics (Continued) Symbol Parameter V Input High Voltage IH V Output Low Voltage OL V Output High Voltage OH1 V Output High Voltage CMOS OH2 AC Read Characteristics Symbol Parameter t Address to Output Delay ACC ( ...

Page 6

Input Test Waveforms and Measurement Level Output Test Load Pin Capacitance ( MHz 25°C Symbol Typ OUT Note: AC Write Characteristics Symbol Parameter t Write Cycle Time WC t Address ...

Page 7

AC Write Waveforms WE Controlled CE Controlled Page Mode Characteristics Symbol Parameter Address, OE Set-up Time AS OES t Address Hold Time AH t Chip Select Set-up Time CS t Chip Select Hold Time CH t Write ...

Page 8

Page Mode Write Waveforms Notes: AT28C010 Military through A16 must specify the page address during each high to low transition of WE (or CE must be high only when WE and CE are both low. ...

Page 9

Chip Erase Waveforms msec (min 12.0V ± 0.5V H Software Data Protection Enable Algorithm Notes: 0010F–PEEPR–02/ msec (min.) LOAD DATA AA TO ADDRESS 5555 LOAD DATA 55 ...

Page 10

Software Data Protection Disable Algorithm Software Protected Program Cycle Waveform Notes: AT28C010 Military 10 LOAD DATA AA TO ADDRESS 5555 LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA 80 TO ADDRESS 5555 LOAD DATA AA TO ADDRESS 5555 LOAD DATA ...

Page 11

Data Polling Characterstics Symbol Parameter t Data Hold Time Hold Time OEH ( Output Delay OE t Write Recovery Time WR Notes: Data Polling Waveforms Toggle Bit Characteristics Symbol Parameter t Data Hold Time ...

Page 12

AT28C010 Ordering Information I (mA ACC (ns) Active Standby 120 80 0.3 150 80 0.3 200 80 0.3 250 80 0.3 Note: 32D6 32-Lead, 0.600" Wide, Non-Windowed, Ceramic Dual Inline (Cerdip) 32F 32-Lead, Non-Windowed, Ceramic Bottom-Brazed Flat Package ...

Page 13

Ordering Information I (mA ACC (ns) Active Standby 120 80 0.3 150 80 0.3 200 80 0.3 250 80 0.3 Note: 32D6 32-Lead, 0.600" Wide, Non-Windowed, Ceramic Dual Inline (Cerdip) 32F 32-Lead, Non-Windowed, Ceramic Bottom-Brazed Flat Package ...

Page 14

... High Endurance Option: Endurance = 100K Write Cycles Valid Part Numbers The following table lists standard Atmel products that can be ordered. Device Numbers Speed AT28C010 12 AT28C010E 12 AT28C010 15 AT28C010E 15 AT28C010 20 AT28C010 25 AT28C010 – Die Products Reference Section: Parallel EEPROM Die Products AT28C010 Military ...

Page 15

Packaging Information 32D6, 32-Lead, 0.600" Wide, Non-Windowed, Ceramic Dual inline Package (Cerdip) Dimensions in Inches and (Millimeters) MIL-STD-1835 D-16 CONFIG A 42.70(1.68) 41.70(1.64) 38.10(1.500) REF 5.72(0.225) MAX SEATING PLANE 5.08(0.200) 3.18(0.125) 1.65(0.065) 1.14(0.045) 2.54(0.100)BSC 15.70(0.620) 15.00(0.590) 0º~ 15º REF 0.381(0.015) ...

Page 16

Packaging Information 30U, 30-Pin, Ceramic Pin Grid Array (PGA) Dimensions in Inches and (Millimeters) 13.74(0.541) 2.57(0.101) 13.36(0.526) 2.06(0.081) 16.18(0.637) 15.82(0.623) 14.17(0.558) 13.77(0.542) 2.54(0.100) TYP 16.71(0.658) 12.70(0.500) TYP 16.31(0.642) 2.54(0.100) TYP 10.41(0.410) 9.91(0.390) 0010F–PEEPR–02/10 7.26(0.286) 6.50(0.256) 1.40(0.055) 1.14(0.045) 0.58(0.023) 0.43(0.017) 3.12(0.123) ...

Page 17

... Disclaimer: The information in this document is provided in connection with Atmel products. No license, express or implied, by estoppel or otherwise, to any intellectual property right is granted by this document or in connection with the sale of Atmel products. EXCEPT AS SET FORTH IN ATMEL’S TERMS AND CONDI- TIONS OF SALE LOCATED ON ATMEL’S WEB SITE, ATMEL ASSUMES NO LIABILITY WHATSOEVER AND DISCLAIMS ANY EXPRESS, IMPLIED OR STATUTORY WARRANTY RELATING TO ITS PRODUCTS INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTY OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, OR NON-INFRINGEMENT ...

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