VS-30TPS08PBF Vishay Semiconductors, VS-30TPS08PBF Datasheet - Page 6

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VS-30TPS08PBF

Manufacturer Part Number
VS-30TPS08PBF
Description
SCRs 800 Volt 30 Amp
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-30TPS08PBF

Product Category
SCRs
Rohs
yes
Breakover Current Ibo Max
300 A
Rated Repetitive Off-state Voltage Vdrm
800 V
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Forward Voltage Drop
1.3 V
Gate Trigger Voltage (vgt)
2 V
Maximum Gate Peak Inverse Voltage
10 V
Gate Trigger Current (igt)
45 mA
Holding Current (ih Max)
100 mA
Mounting Style
Through Hole
Package / Case
TO-247AC

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VS-30TPS08PBF
Quantity:
175
Company:
Part Number:
VS-30TPS08PBF
Quantity:
175
Company:
Part Number:
VS-30TPS08PBF(VS-30TPS08-M3)
Quantity:
70 000
DIMENSIONS in millimeters and inches
Notes
(1)
(2)
(3)
(4)
(5)
(6)
(7)
Revision: 16-Jun-11
SYMBOL
Dimensioning and tolerancing per ASME Y14.5M-1994
Contour of slot optional
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
Thermal pad contour optional with dimensions D1 and E1
Lead finish uncontrolled in L1
Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
Outline conforms to JEDEC outline TO-247 with exception of dimension c
D1
A1
A2
b1
b2
b3
b4
b5
c1
A
b
D
c
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
Planting
19.71
13.08
MIN.
MILLIMETERS
4.65
2.21
1.50
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
(2) R/2
0.10
(5) L1
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2 x R
Q
(2)
2 x b2
M
3 x b
(c)
B
C
C
Section C - C, D - D, E - E
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
A
MAX.
20.70
5.31
2.59
2.49
1.40
1.35
2.39
2.37
3.43
3.38
0.86
0.76
M
1
-
(b1, b3, b5)
(b, b2, b4)
2
b4
E
(3)
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
MIN.
N
(4)
3
INCHES
2 x e
S
c1
Base metal
D
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.094
0.135
0.133
0.034
0.030
0.815
L
-
See view B
NOTES
3
4
D D E
A
A1
1
View B
C
A2
D
A
A
SYMBOL
E
C
P1
P
D2
FK
E1
L1
N
Q
E
R
S
e
L
C
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Thermal pad
15.29
13.72
14.20
MILLIMETERS
MIN.
0.51
3.71
3.56
5.31
4.52
Ø K
-
D2
5.46 BSC
5.51 BSC
7.62 BSC
(6) Ø P
M
2.54
D
Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
Outline Dimensions
B
Vishay Semiconductors
M
MAX.
15.87
16.10
1.30
4.29
3.66
6.98
5.69
5.49
A
-
View A - A
0.01
DiodesEurope@vishay.com
(4)
E1
4
M
D
0.020
0.602
0.540
0.559
0.146
0.209
MIN.
0.14
1.78
(Datum B)
B
-
0.215 BSC
0.217 BSC
Document Number: 95223
M
INCHES
FP1
0.010
0.3
D1 (4)
MAX.
0.051
0.625
0.634
0.169
0.144
0.275
0.224
0.216
-
NOTES
3

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