VS-40TTS12PBF Vishay Semiconductors, VS-40TTS12PBF Datasheet - Page 2

• Manufacturer Part Number: VS-40TTS12PBF
• Description: SCRs 1200 Volt 25 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-40TTS12PBF

• Product Category: SCRs
• Rohs: yes
• Mounting Style: Through Hole
• Package / Case: TO-247AC
• Factory Pack Quantity: 50

Revision: 28-Mar-12
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
Maximum on-state voltage
Low level value of on-state slope resistance
Low level value of threshold voltage
Maximum reverse and direct leakage
current
Holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Maximum required DC gate current to
trigger
Maximum required DC gate
voltage to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
Marking device
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
2
2
t for fusing
t for fusing
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
maximum
minimum
SYMBOL
SYMBOL
SYMBOL
I
SYMBOL
RRM
T
P
- V
V
dV/dt
+ I
R
R
J
R
I
dI/dt
P
I
I
V
V
V
T(AV)
I
RMS
G(AV)
I
I
, T
TSM
T(TO)
2
t
thCS
I
GD
t
t
thJC
thJA
I
GT
r
I
GM
GD
2
TM
GT
gt
/I
H
rr
q
t
L
GM
t
GM
t
DRM
Stg
T
T
T
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
80 A, T
T
T
T
Anode supply = 6 V, resistive load, initial I
Anode supply = 6 V, resistive load
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
T
DC operation
Mounting surface, smooth and greased
Case style TO-220AB
J
J
J
C
J
J
J
= 25 °C
= 140 °C
= 140 °C, V
= 25 °C
= 140 °C
= 140 °C
= 93 °C, 180° conduction half sine wave
2
J
VS-40TTS12PbF, VS-40TTS12-M3
= 25 °C
TEST CONDITIONS
DRM
TEST CONDITIONS
TEST CONDITIONS
TEST CONDITIONS
= Rated value
www.vishay.com/doc?91000
RRM
RRM
V
R
applied
applied
= Rated V
J
J
Vishay Semiconductors
= 25 °C
= 25 °C
RRM
T
= 1 A
[e-mail]
/V
DRM
Document Number: 94390
- 40 to 140
VALUES
VALUES
VALUES
12 (10)
VALUES
0.07
6 (5)
6300
11.4
0.96
0.8
0.5
300
350
450
630
100
200
500
150
60
1.6
0.5
8.0
2.0
1.5
1.3
0.2
1.5
10
35
110
2
25
40
10
0.9
4
40TTS12
kgf · cm
(lbf · in)
UNITS
UNITS
UNITS
°C/W
UNITS
A
A/μs
V/μs
A
m
mA
mA
mA
oz.
°C
W
2
g
A
V
V
A
V
V
μs
2
s
s