VS-10RIA80 Vishay Semiconductors, VS-10RIA80 Datasheet - Page 2

• Manufacturer Part Number: VS-10RIA80
• Description: SCRs 800 Volt 10 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-10RIA80

• Product Category: SCRs
• Rohs: yes
• Breakover Current Ibo Max: 240 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 10 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 60 mA
• Holding Current (ih Max): 130 mA
• Mounting Style: Stud
• Package / Case: TO-48
• Factory Pack Quantity: 100

10RIA Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
Notes
(1)
(2)
www.vishay.com
2
VOLTAGE RATINGS
TYPE
NUMBER
10RIA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
Maximum I
Low level value of threshold voltage
High level value of threshold voltage
Low level value of
on-state slope resistance
High level value of
on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs
For voltage pulses with t
2
2
t for fusing
t for fusing
VOLTAGE
CODE
100
120
10
20
40
60
80
p
 5 ms
V
DRM
/V
AND OFF-STATE VOLTAGE
RRM
SYMBOL
V
V
For technical questions, contact: [e-mail]
I
T(RMS)
I
, MAXIMUM REPETITIVE PEAK
I
T(TO)1
T(TO)2
V
T(AV)
I
TSM
I
2
r
r
I
I
2
TM
t1
t2
t
H
L
t
1000
1200
Medium Power Thyristors
100
200
400
600
800
V
180° conduction, half sine wave
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x  x I
T
(I >  x I
(16.7 % x  x I
T
(I >  x I
I
T
pk
J
J
J
(Stud Version), 10 A
= T
= T
= 25 °C, anode supply 12 V resistive load
= 32 A, T
J
J
maximum
maximum
T(AV)
T(AV)
J
TEST CONDITIONS
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
), T
), T
= 25 °C, t
T(AV)
T(AV)
(1)
J
J
= T
= T
< I <  x I
< I <  x I
J
J
RRM
RRM
maximum
maximum
p
= 10 ms sine pulse
V
RSM
Sinusoidal
half wave,
initial T
T
T(AV)
T(AV)
J
, MAXIMUM NON-REPETITIVE
maximum
),
),
PEAK VOLTAGE
J
=
1100
1300
150
300
500
700
900
V
(2)
VALUES
2550
1.39
16.7
1.75
1.10
24.3
225
240
190
200
255
233
180
165
130
200
10
85
25
Document Number: 93689
AT T
I
DRM
Revision: 06-Jun-08
J
/I
RRM
= T
mA
J
20
10
MAXIMUM
MAXIMUM
UNITS
A
A
m
mA
°C
A
A
A
2
V
V
2
s
s