VS-ST110S1490 Vishay Semiconductors, VS-ST110S1490 Datasheet - Page 6

• Manufacturer Part Number: VS-ST110S1490
• Description: SCRs 1400 Volt 110 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST110S1490

• Product Category: SCRs
• Breakover Current Ibo Max: 2830 A
• Rated Repetitive Off-state Voltage Vdrm: 1400 V
• Off-state Leakage Current @ Vdrm Idrm: 20 mA
• Forward Voltage Drop: 1.52 V
• Gate Trigger Voltage (vgt): 3 V
• Maximum Gate Peak Inverse Voltage: 5 V
• Gate Trigger Current (igt): 150 mA
• Holding Current (ih Max): 600 mA
• Mounting Style: Stud
• Package / Case: TO-94
• Factory Pack Quantity: 25

ST110SPbF Series
Vishay Semiconductors
www.vishay.com
6
0.001
0.01
[e-mail], [e-mail],
100
0.1
0.1
10
0.001
0.001
For technical questions within your region, please contact one of the following:
1
1
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
Steady State Value
R
(DC Operation)
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs
thJC
rated di/dt : 20V, 10ohms; tr<=1 µs
= 0.195 K/W
VGD
0.01
Fig. 8 - Thermal Impedance Z
IGD
0.01
Phase Control Thyristors
Device: ST110S Series
(Stud Version), 110 A
Fig. 9 - Gate Characteristics
Square Wave Pulse Duration (s)
Instantaneous Gate Current (A)
0.1
(b)
0.1
ST110S Series
(a)
thJC
1
Frequency Limited by PG(AV)
Characteristic
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
[e-mail]
1
10
(1)
(2)
(3)
(4)
10
100
Document Number: 94393
Revision: 17-Aug-10