TISP8250DR-S Bourns, TISP8250DR-S Datasheet - Page 2

• Manufacturer Part Number: TISP8250DR-S
• Description: SCRs PROTECTOR - GATED UNIDIRECTIONAL
• Manufacturer: Bourns

Specifications of TISP8250DR-S

• Breakover Current Ibo Max: 5 A
• Rated Repetitive Off-state Voltage Vdrm: 250 V
• Off-state Leakage Current @ Vdrm Idrm: 5 uA
• Holding Current (ih Max): 180 mA
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8
• Breakover Voltage Vbo: 340 V
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Off-state Capacitance Co: 100 pF
• Factory Pack Quantity: 2500

Repetitive peak off-state voltage (see Note 1)
Non-repetitive peak impulse current (see Notes 2, 3 and 4)
Non-repetitive peak on-state current, 50 Hz (see Notes 2, 3 and 4)
Junction temperature
Storage temperature range
NOTES: 1. For voltage values at lower temperatures, derate at 0.13 %/ ° C.
NOTE
Absolute Maximum Ratings, T A = 25
R θ
Electrical Characteristics, T A = 25
Thermal Characteristics, T A = 25
V
I
I
V
DRM
(BO)
I
C
(BO)
JA
I
GT
I
GK
2/10 µs (Telcordia GR-1089-CORE, 2/10 µs waveshape)
0.2/310 (CNET I 31-24, 0.5/700 µs waveshape)
5/310 µs (ITU-T K.20/21, 10/700 µs voltage waveshape)
5/310 µs (FTZ R12, 10/700 µs voltage waveshape)
10/1000 µs (Telcordia GR-1089-CORE, 10/1000 µs voltage waveshape)
10 ms half sine wave
1s rectified sine wave
1000 s rectified sine wave
H
D
O
TISP8250D Overvoltage and Overcurrent Protector
Junction to ambient thermal resistance
2. Initially the device must be in thermal equilibrium, with T
3. The surge may be repeated after the device returns to its initial conditions.
4. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A printed wiring track
5. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5A rated printed wiring track widths.
widths. Derate current values at -0.61 %/ ° C for ambient temperatures above 25 ° C.
Repetitive peak off-state current
Gate-cathode voltage
Parameter
Off-state capacitance
Parameter
Gate trigger current
Breakover voltage
Breakover current
Off-state current
Holding current
°
C (Unless Otherwise Noted)
°
C (Unless Otherwise Noted)
°
C (Unless Otherwise Noted)
EIA/JESD51-3 PCB, I
(see Note 5)
V
dv/dt = 250 V/ms, R
dv/dt = 250 V/ms, R
I
V
f = 1 MHz, V
I
V
Rating
T
G
AK
D
D
= 5 A, di/dt = -30 mA/ms
= 30 mA
= V
= 60 V
= 100 V
DRM
d
= 1 V rms, V
J
= 25 ° C.
T
SOURCE
SOURCE
= I
TSM(1000)
Test Conditions
Test Conditions
D
= 300 Ω
= 300 Ω
= 5 V
Customers should verify actual device performance in their specific applications.
Specifications are subject to change without notice.
T
T
A
A
= 25 ° C
= 85 ° C
Symbol
I
V
PPSM
I
T
TSM
DRM
T
stg
J
JULY 2000 - REVISED JULY 2008
Min Typ Max Unit
Min Typ Max Unit
180
0.6
15
-40 to +150
-65 to +150
Value
250
3.5
0.7
75
40
40
40
30
5
170 ° C/W
340
200 mA
100
1.2
10
40
5
5
Unit
° C
° C
mA
mA
µA
µA
pF
V
A
A
V
V