SI1912EDH-T1 Vishay/Siliconix, SI1912EDH-T1 Datasheet

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SI1912EDH-T1

Manufacturer Part Number
SI1912EDH-T1
Description
MOSFET 20V 1.28A
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI1912EDH-T1

Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
1.28 A
Resistance Drain-source Rds (on)
0.28 Ohms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363-6
Fall Time
85 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
740 mW
Rise Time
85 ns
Factory Pack Quantity
3000
Tradename
TrenchFET
Typical Turn-off Delay Time
350 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI1912EDH-T1-E3
Manufacturer:
VISHY
Quantity:
20 000
Company:
Part Number:
SI1912EDH-T1-E3
Quantity:
12 000
Part Number:
SI1912EDH-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Document Number: 71408
S10-1054-Rev. B, 03-May-10
G
Ordering Information: Si1912EDH-T1-E3 (Lead (Pb)-free)
D
S
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Diode-Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
1
1
2
V
DS
20
1
2
3
SC-70 (6-LEADS)
(V)
SOT-363
Top View
Si1912EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.280 at V
0.360 at V
0.450 at V
6
5
4
R
J
a
DS(on)
D
G
S
= 150 °C)
1
2
2
a
Dual N-Channel 20 V (D-S) MOSFET
GS
GS
GS
(Ω)
= 4.5 V
= 2.5 V
= 1.8 V
Marking Code
a
CA XX
a
Steady State
Steady State
Part # Code
t ≤ 5 s
T
T
T
T
A
A
A
A
A
Lot Traceability
and Date Code
= 25 °C
= 85 °C
= 25 °C
= 85 °C
= 25 °C, unless otherwise noted
I
D
1.28
1.13
1.0
(A)
Symbol
R
R
thJA
thJF
Symbol
T
G
J
1
V
V
I
P
, T
I
DM
I
DS
GS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• ESD Protected: 2000 V
• Thermally Enhanced SC-70 Package
• Compliant to RoHS Directive 2002/95/EC
• Load Switching
• PA Switch
• Level Switch
Definition
1 k
Typical
130
170
80
1.28
0.92
0.61
0.74
0.38
®
5 s
Power MOSFETs: 1.8 V Rated
S
D
1
1
- 55 to 150
± 12
20
4
G
Steady State
2
Maximum
170
220
100
1.13
0.81
0.48
0.57
0.30
Vishay Siliconix
Si1912EDH
1 k
www.vishay.com
°C/W
Unit
Unit
°C
W
D
V
A
S
2
2
1

Related parts for SI1912EDH-T1

SI1912EDH-T1 Summary of contents

Page 1

... Top View Ordering Information: Si1912EDH-T1-E3 (Lead (Pb)-free) Si1912EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Diode-Current (Diode Conduction) a Maximum Power Dissipation ...

Page 2

... Si1912EDH Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time ...

Page 3

... 0.0 0.3 0 Total Gate Charge (nC) g Gate Charge Document Number: 71408 S10-1054-Rev. B, 03-May- 1.5 2.0 0.9 1.2 1.5 Si1912EDH Vishay Siliconix 2 ° °C 1.5 1.0 0.5 0.0 0.0 0.5 1.0 1 Gate-to-Source Voltage (V) GS Transfer Characteristics 140 120 100 C iss oss 20 C rss ...

Page 4

... Si1912EDH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0 0.2 0.4 0 Source-Drain Diode Forward Voltage 0.2 0 100 µ 0.1 - 0.2 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71408. Document Number: 71408 S10-1054-Rev. B, 03-May- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si1912EDH Vishay Siliconix - www.vishay.com ...

Page 6

- - Document Number: 71154 06-Jul-01 Package Information Dim Min Nom Max A 0.90 – A – – 0.80 ...

Page 7

... BASIC PAD PATTERNS See Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs, (http://www.vishay.com/doc?72286) for the SC-70 6-pin basic pad layout and dimensions. This pad pattern is sufficient for the low-power applications for which this package is intended ...

Page 8

AN816 Vishay Siliconix Front of Board SC70 SC70−6 DUAL THERMAL PERFORMANCE Junction-to-Foot Thermal Resistance (the Package Performance) Thermal performance for the dual SC-70 6-pin package is measured as junction-to-foot thermal resistance, in which the “foot” is the ...

Page 9

Alloy 42 200 100 Time (Secs) FIGURE 4. Dual SC70-6 Thermal Performance on EVB Document Number: 71405 12-Dec-03 500 400 300 200 Copper 100 0 ...

Page 10

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SC-70: 6-Lead Return to Index Return to Index www.vishay.com 18 0.067 (1.702) 0.016 0.026 0.010 (0.406) (0.648) (0.241) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72602 Revision: 21-Jan-08 ...

Page 11

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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