NE25139-T1-U72 NEC/CEL, NE25139-T1-U72 Datasheet - Page 2

• Manufacturer Part Number: NE25139-T1-U72
• Description: MOSFET REORD 551-NE25139 SOT-143 DL GT MOSFET
• Manufacturer: NEC/CEL

Specifications of NE25139-T1-U72

• Factory Pack Quantity: 3000

Note:
1. Operation in excess of any one of these parameters may result
TYPICAL PERFORMANCE CURVES
ABSOLUTE MAXIMUM RATINGS
SYMBOLS
in permanent damage.
V
V
V
T
T
P
DSX
G1S
G2S
I
STG
CH
D
T
250
150
200
100
80
40
50
0
0
FORWARD TRANSFER ADMITTANCE vs.
-1.8
Drain to Source Voltage
Gate 1 to Source Voltage
Gate 2 to Source Voltage
Drain Current
Channel Temperature
Storage Temperature
Total Power Dissipation
0
TOTAL POWER DISSIPATION vs.
Gate 1 to Source Voltage, V
PARAMETERS
GATE 1 TO SOURCE VOLTAGE
Ambient Temperature, T
AMBIENT TEMPERATURE
-1.2
25
-0.6
50
75
0
0
-0.5 V
0.5 V
V
UNITS
G2S
mW
A
mA
FREE
AIR
V
V
V
V
f = 1 kHz
+0.6
G1S
100
C
C
( C)
= 1 V
DS
= 5 V
(V)
1
-55 to +125
+1.2
125
RATINGS
(T
-4.5
-4.5
125
200
A
10
80
(T
= 25 C)
A
= 25 C)
100
80
40
0
50
0
FORWARD TRANSFER ADMITTANCE vs.
1.8
0
GATE 1 TO SOURCE VOLTAGE
Gate 1 to Source Voltage, V
-1.2
DRAIN CURRENT vs.
Drain Current, I
DRAIN CURRENT
-0.5 V
-0.6
V
50
0 V
G2S
0
= 1 V
D
0.5 V
-0.5 V
-1.0 V
0 V
(mA)
0.5 V
+0.6
V
G1S
V
f = 1kHz
DS
DS
V
= 1 V
GS2
= 5 V
= 5 V
(V)
100
+1.2