IRF640ST4 STMicroelectronics
IRF640ST4
Manufacturer Part Number
IRF640ST4
Description
MOSFET N-Ch 200 Volt 18 Amp
Manufacturer
STMicroelectronics
Specifications of IRF640ST4
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18 A
Resistance Drain-source Rds (on)
0.18 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
D2PAK
Fall Time
25 ns
Minimum Operating Temperature
- 65 C
Power Dissipation
125 W
Rise Time
27 ns
Factory Pack Quantity
1000
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF640ST4
Manufacturer:
ST
Quantity:
20 000
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