SI7415DN-T1 Vishay/Siliconix, SI7415DN-T1 Datasheet - Page 3

• Manufacturer Part Number: SI7415DN-T1
• Description: MOSFET 60V 5.7A 1.5W
• Manufacturer: Vishay/Siliconix

Specifications of SI7415DN-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.6 A
• Resistance Drain-source Rds (on): 65 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK 1212-8
• Fall Time: 12 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.5 W
• Rise Time: 12 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET/PowerPAK
• Typical Turn-off Delay Time: 22 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71691
S-83043-Rev. E, 22-Dec-08
0.20
0.16
0.12
0.08
0.04
0.00
10
20
10
8
6
4
2
0
1
0.0
0
0
V
V
I
Source-Drain Diode Forward Voltage
D
GS
DS
0.2
On-Resistance vs. Drain Current
= 5.7 A
= 30 V
= 4.5 V
4
V
SD
4
Q
g
- Source-to-Drain Voltage (V)
0.4
- Total Gate Charge (nC)
I
D
- Drain Current (A)
Gate Charge
T
J
8
= 150 °C
0.6
8
12
0.8
V
12
GS
T
J
16
= 25 °C
= 10 V
1.0
1.2
16
20
1200
1000
0.20
0.16
0.12
0.08
0.04
0.00
800
600
400
200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
V
I
C
D
GS
rss
10
= 5.7 A
= 10 V
2
V
V
T
DS
GS
J
0
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
20
25
Capacitance
4
C
I
D
oss
30
50
Vishay Siliconix
= 5.7 A
C
iss
6
75
Si7415DN
40
www.vishay.com
100
8
50
125
150
60
10
3