SI4860DY-T1 Vishay/Siliconix, SI4860DY-T1 Datasheet

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SI4860DY-T1

Manufacturer Part Number
SI4860DY-T1
Description
MOSFET 30V 16A 1.6W
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI4860DY-T1

Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
11 A
Resistance Drain-source Rds (on)
8 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Fall Time
12 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.6 W
Rise Time
12 ns
Factory Pack Quantity
2500
Tradename
TrenchFET
Typical Turn-off Delay Time
46 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4860DY-T1-E3
Manufacturer:
VISHAY
Quantity:
5 416
Part Number:
SI4860DY-T1-E3
Manufacturer:
VISHAY
Quantity:
12 945
Part Number:
SI4860DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4860DY-T1-E3
Quantity:
1 045
Part Number:
SI4860DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71752
S0-0221-Rev. D, 09-Feb-09
Ordering Information: Si4860DY-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (MOSFET)
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
30
(V)
G
S
S
S
N-Channel Reduced Q
1
2
3
4
Si4860DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
0.011 at V
0.008 at V
Top View
R
SO-8
DS(on)
J
a
= 150 °C)
GS
GS
(Ω)
= 4.5 V
= 10 V
8
7
6
5
a
a
D
D
D
D
a
A
I
D
= 25 °C, unless otherwise noted
16
15
(A)
Steady State
Steady State
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
g
, Fast Switching MOSFET
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• PWM Optimized for High Efficiency
• 100 % R
• Buck Converter
• Synchronous Rectifier
Symbol
Symbol
T
R
R
J
Available
- High Side
- Low Side
- Secondary Rectifier
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
g
Tested
®
Power MOSFETs
Typical
10 s
3.0
3.5
2.2
16
13
29
67
13
G
N-Channel MOSFET
- 55 to 150
± 20
± 50
30
D
S
Steady State
Maximum
1.40
1.6
1.0
11
35
80
16
Vishay Siliconix
8
Si4860DY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI4860DY-T1 Summary of contents

Page 1

... Top View Ordering Information: Si4860DY-T1-E3 (Lead (Pb)-free) Si4860DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...

Page 2

... Si4860DY Vishay Siliconix MOSFET SPECIFICATIONS T Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time ...

Page 3

... Source-Drain Diode Forward Voltage Document Number: 71752 S0-0221-Rev. D, 09-Feb- 0.040 0.032 0.024 0.016 °C J 0.008 0.000 0.8 1.0 1.2 Si4860DY Vishay Siliconix 2500 2000 C iss 1500 1000 C oss 500 C rss Drain-to-Source Voltage (V) DS Capacitance 2.00 V ...

Page 4

... Si4860DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 250 µA D 0.3 0.0 - 0.3 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 DIM ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep- ...

Page 6

... TrenchFET Power MOSFETs Mounting LITTLE FOOT Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same ...

Page 7

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.022 (0.559) Return to Index Return to Index www.vishay.com 22 0.172 (4.369) 0.028 (0.711) 0.050 (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72606 Revision: 21-Jan-08 ...

Page 8

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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