NDS9435A_Q Fairchild Semiconductor, NDS9435A_Q Datasheet - Page 2

• Manufacturer Part Number: NDS9435A_Q
• Description: MOSFET -30V -5.3A P-CH
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9435A_Q

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: - 5.3 A
• Resistance Drain-source Rds (on): 42 mOhms
• Configuration: Single Quad Drain Triple Source
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 9 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 2.5 W
• Rise Time: 13 ns
• Typical Turn-off Delay Time: 14 ns

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
∆BV
I
I
I
On Characteristics
V
∆V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
the drain pins. R
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
FS
GS(th)
SD
θJA
DS(on)
iss
oss
rss
∆T
∆T
g
gs
gd
GS(th)
DSS
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
θJC
is guaranteed by design while R
a) 50°C/W when
mounted on a 1in
pad of 2 oz copper
Parameter
(Note 2)
2
(Note 2)
θCA
is determined by the user's board design.
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
T
D
D
A
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
b) 105°C/W when
= –250 µA, Referenced to 25°C
= –250 µA, Referenced to 25°C
= 25°C unless otherwise noted
= –10 V, I
= –24 V,
= V
= –5 V,
= –15 V,
= –15 V,
= 0 V, I
= 25 V,
= –25 V
= –10 V,
= –4.5 V,
= –10 V,
= –15 V,
= –10 V,
= –10 V
= 0 V,
mounted on a .04 in
pad of 2 oz copper
Test Conditions
GS
, I
D
D
I
= –250 µA
= –250 µA
D
S
= –5.3 A, T
= –2.1 A
V
V
V
I
I
V
I
D
D
V
I
I
R
D
GS
DS
DS
D
D
GS
DS
= –5.3 A
= –4 A
GEN
= –4 A,
2
= –5.3 A
= –1 A,
= 0 V
= 0 V
= 0 V
= –5 V
= 0 V,
= 6 Ω
(Note 2)
J
=125°C
Min
–30
–25
–1
c) 125°C/W when mounted on a
minimum pad.
Typ Max Units
–1.7
–0.8
–23
528
132
4.5
2.2
42
65
57
10
70
13
14
10
7
9
2
–100
–2.1
–1.2
100
–1
–3
50
80
77
14
24
25
17
14
NDS9435A Rev E(W)
mV/°C
mV/°C
mΩ
nC
nC
nC
µA
nA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V