TP0620N3-P002 Supertex, TP0620N3-P002 Datasheet - Page 4
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TP0620N3-P002
Manufacturer Part Number
TP0620N3-P002
Description
MOSFET 200V 12Ohm
Manufacturer
Supertex
Datasheet
1.TP0620N3-P002-G.pdf
(5 pages)
Specifications of TP0620N3-P002
Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 175 mA
Resistance Drain-source Rds (on)
12 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Minimum Operating Temperature
- 55 C
Power Dissipation
1 W
Factory Pack Quantity
2000
Typical Turn-off Delay Time
20 ns
Typical Performance Curves
1.15
1.10
1.05
1.00
0.95
0.90
200
150
100
-2.0
-1.0
50
Supertex inc.
0
Capacitance vs. Drain-to-Source Voltage
0
-50
0
0
BV
V
DS
DSS
= -25V
-2
Transfer Characteristics
Variation with Temperature
-10
0
-4
V
V
GS
DS
T
j
(volts)
-20
50
(
(volts)
O
C)
-6
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
-30
f = 1MHz
-8
(cont.)
150
-10
-40
T
C
T
T
C
C
A
A
A
OSS
ISS
RSS
= 25
= -55
= 125
O
O
C
O
C
C
4
-10
1.2
1.1
1.0
0.9
0.8
0.7
20
16
12
-8
-6
-4
-2
0
8
4
0
-50
V
0
0
(th)
Gate Drive Dynamic Characteristics
On-Resistance vs. Drain Current
and R
45pf
Tel: 408-222-8888
-0.2
0.5
V
DS
0
GS
Q
Variation with Temperature
= -5.0V
G
R
-0.4
(nanocoulombs)
1.0
DS(ON)
V
I
D
DS
170pf
(amperes)
T
j
= -10V
(
50
@ -10V, -0.2A
O
C)
V
V
(th)
1.5
-0.6
DS
@ -1.0mA
www.supertex.com
V
= -40V
GS
100
= -10V
2.0
-0.8
2.5
-1.0
150
1.66
1.33
1.00
0.66
0.33
0
TP0620