SI3457DV_Q Fairchild Semiconductor, SI3457DV_Q Datasheet
SI3457DV_Q
Manufacturer Part Number
SI3457DV_Q
Description
MOSFET SSOT6 SINGLE PCH
Manufacturer
Fairchild Semiconductor
Datasheet
1.SI3457DV_Q.pdf
(5 pages)
Specifications of SI3457DV_Q
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
- 4 A
Resistance Drain-source Rds (on)
44 mOhms
Configuration
Single Quad Drain
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SSOT-6
Fall Time
12 ns
Forward Transconductance Gfs (max / Min)
8.4 S
Minimum Operating Temperature
- 55 C
Power Dissipation
1.6 W
Rise Time
12 ns
Typical Turn-off Delay Time
16 ns
Si3457DV
Single P-Channel Logic Level PowerTrench MOSFET
General Description
This P-Channel Logic Level MOSFET is produced
using Fairchild’s advanced PowerTrench process. It
has been optimized for battery power management
applications.
Applications
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
Battery management
Load switch
Battery protection
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
.457
SuperSOT -6
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D
TM
S
– Continuous
– Pulsed
Si3457DV
Device
Parameter
D
D
G
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
–4 A, –30 V.
Low gate charge
High performance trench technology for extremely
low R
DS(ON)
1
2
3
Tape width
–55 to +150
8mm
R
R
Ratings
DS(ON)
DS(ON)
–30
–20
1.6
0.8
–4
78
30
25
= 50 m
= 75 m
6
5
4
@ V
@ V
April 2001
GS
GS
Si3457DV Rev A1 (W)
3000 units
Quantity
= –10 V
= –4.5 V
Units
C/W
C/W
W
V
V
A
C
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SI3457DV_Q Summary of contents
Page 1
... Thermal Characteristics Thermal Resistance, Junction-to-Ambient R JA Thermal Resistance, Junction-to-Case R JC Package Marking and Ordering Information Device Marking Device .457 Si3457DV 2001 Fairchild Semiconductor Corporation Features –4 A, –30 V. Low gate charge High performance trench technology for extremely low R DS(ON =25 ...
Page 2
Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS Breakdown Voltage Temperature BV DSS Coefficient Zero Gate Voltage Drain Current DSS I Gate–Body Leakage, Forward GSSF I Gate–Body Leakage, Reverse GSSR On Characteristics (Note 2) ...
Page 3
Typical Characteristics -10V -5.0V GS -4.5V -6.0V 15 -4. DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -4. -10V GS ...
Page 4
Typical Characteristics - GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 R LIMIT DS(ON) 10 10ms 100ms ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ ...