VN10KN3-P002 Supertex, VN10KN3-P002 Datasheet

VN10KN3-P002

Manufacturer Part Number

VN10KN3-P002

Description

MOSFET 60V 5Ohm

Manufacturer

Supertex

Datasheet

1.VN10KN3-P013-G.pdf (5 pages)

Specifications of VN10KN3-P002

Product Category

MOSFET

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

0.31 A

Resistance Drain-source Rds (on)

5 Ohms

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92

Minimum Operating Temperature

- 55 C

Power Dissipation

1 W

Factory Pack Quantity

2000

Current page: 1 of 5
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Features

►

Applications

►

For packaged products, -G indicates package is RoHS compliant (‘Green’).

Consult factory for die / wafer form part numbers.

Refer to Die Specification VF21 for layout and dimensions.

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Supertex inc.

Ordering Information

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Motor controls

Converters

Amplifiers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

Device

VN10K

ISS

Supertex inc.

and fast switching speeds

VN10KN3-G

Package

TO-92

N-Channel Enhancement-Mode

Vertical DMOS FET

1235 Bordeaux Drive, Sunnyvale, CA 94089

-55

C to +150

Value

±30V

DGS

DSS

(V)

/BV

General Description

This enhancement-mode (normally-off) transistor utilizes a

vertical DMOS structure and Supertex’s well-proven, silicon-

gate manufacturing process. This combination produces a

device with the power handling capabilities of bipolar transistors

and the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of all

MOS structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

Pin Configuration

Product Marking

Package may or may not include the following marks: Si or

DGS

Y Y W W

SiVN

1 0 K

Tel: 408-222-8888

SOURCE

(max)

DS(ON)

5.0

(Ω)

YY = Year Sealed

WW = Week Sealed

TO-92 (N3)

= “Green” Packaging

www.supertex.com

DRAIN

GATE

(min)

(mA)

750

D(ON)

VN10K

Related parts for VN10KN3-P002

VN10KN3-P002 Summary of contents

Page 1

... Ordering Information Package Device TO-92 VN10K VN10KN3-G For packaged products, -G indicates package is RoHS compliant (‘Green’). Consult factory for die / wafer form part numbers. Refer to Die Specification VF21 for layout and dimensions. Absolute Maximum Ratings Parameter Drain-to-source voltage ...

Page 2

... Notes: 1. All D.C. parameters 100% tested All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V INPUT 10 (ON) t d(ON) VDD 10% OUTPUT 0V 90% Supertex inc. I Power Dissipation D † (pulsed (A) (W) 1.0 1.0 . (VN0106N3 can be used (continuous) of 500mA is needed unless otherwise specified) ...

Page 3

... DS Transconductance vs. Drain Current 250 200 150 100 200 400 I (mA) D Maximum Rated Safe Operating Area 10 1.0 TO-92 (DC) 0.1 0.01 1 (volts) DS Supertex inc 10V DS 300µs, 2% Duty Cycle, Pulse Test 600 800 1000 100 1000 ...

Page 4

... DS 300µs, 2% Duty Cycle, 0.8 Pulse Test 0.6 0.4 0 2.0 4.0 V (volts) GS Capacitance vs. Drain-to-Source Voltage (volts) DS Supertex inc. (cont.) 100 150 C) 6.0 8 ISS C RSS 1235 Bordeaux Drive, Sunnyvale, CA 94089 4 On-Resistance vs. Gate-to-Source Voltage 100 1.0 1 (volts) GS Output Conductance vs Drain Current 1 ...

Page 5

... This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives Supertex inc ...

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