SI4834BDY-T1 Vishay/Siliconix, SI4834BDY-T1 Datasheet - Page 9
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SI4834BDY-T1
Manufacturer Part Number
SI4834BDY-T1
Description
MOSFET 30V 7.5A 1.1W
Manufacturer
Vishay/Siliconix
Datasheet
1.SI4834BDY-T1.pdf
(10 pages)
Specifications of SI4834BDY-T1
Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.7 A
Resistance Drain-source Rds (on)
22 mOhms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Fall Time
10 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.1 W
Rise Time
10 ns
Factory Pack Quantity
2500
Tradename
TrenchFET
Typical Turn-off Delay Time
19 ns
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4834BDY-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4834BDY-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
135
Part Number:
SI4834BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4834BDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
www.vishay.com
22
Return to Index
Return to Index
(0.559)
0.022
Recommended Minimum Pads
Dimensions in Inches/(mm)
(4.369)
0.172
(1.270)
(0.711)
0.050
0.028
Document Number: 72606
Revision: 21-Jan-08