SI4501ADY-T1 Vishay/Siliconix, SI4501ADY-T1 Datasheet - Page 6

• Manufacturer Part Number: SI4501ADY-T1
• Description: MOSFET 30/8V 8.8/5.7A 1.3W
• Manufacturer: Vishay/Siliconix

Specifications of SI4501ADY-T1

• Product Category: MOSFET
• Transistor Polarity: N and P-Channel
• Drain-source Breakdown Voltage: 30 V, 8 V
• Gate-source Breakdown Voltage: +/- 20 V, +/- 8 V
• Continuous Drain Current: 8.8 A, 5.7 A
• Resistance Drain-source Rds (on): 18 mOhms, 42 mOhms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOIC-8 Narrow
• Fall Time: 8 ns at N Channel, 45 ns at P Channel
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.3 W
• Rise Time: 8 ns at N Channel, 45 ns at P Channel
• Factory Pack Quantity: 2500
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 35 ns at N Channel, 60 ns at P Channel

Si4501ADY
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
6
0.10
0.08
0.06
0.04
0.02
0.00
40
32
24
16
8
0
6
5
4
3
2
1
0
0
0
0
V
I
D
DS
V
= 5.7 A
GS
On-Resistance vs. Drain Current
= - 4 V
2
= 2.5 V
5
3
V
V
GS
DS
Q
Output Characteristics
g
= 5 V thru 3.5 V
- Drain-to-Source Voltage (V)
- Total Gate Charge (nC)
I
D
Gate Charge
- Drain Current (A)
10
4
6
V
GS
= 4.5 V
3 V
15
6
9
2.5 V
2 V
20
12
8
1.5 V
10
25
15
2000
1600
1200
800
400
1.6
1.4
1.2
1.0
0.8
0.6
30
24
18
12
0
6
0
- 50
0
0
On-Resistance vs. Junction Temperature
C
- 25
V
I
rss
D
0.5
GS
= 5.7 A
= 4.5 V
V
V
T
GS
Transfer Characteristics
DS
2
0
J
1.0
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
C
- Drain-to-Source Voltage (V)
oss
25
Capacitance
C
1.5
iss
S09-0868-Rev. D, 18-May-09
50
4
Document Number: 71922
2.0
T
C
25 °C
75
= - 55 °C
2.5
100
6
3.0
125 °C
125
150
3.5
8