SI7461DP-T1 Vishay/Siliconix, SI7461DP-T1 Datasheet - Page 3

• Manufacturer Part Number: SI7461DP-T1
• Description: MOSFET 60V 14.4A 1.9W
• Manufacturer: Vishay/Siliconix

Specifications of SI7461DP-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 8.6 A
• Resistance Drain-source Rds (on): 14.5 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SO-8
• Fall Time: 20 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.9 W
• Rise Time: 20 ns
• Factory Pack Quantity: 3000
• Typical Turn-off Delay Time: 205 ns

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 72567
S10-2244-Rev. G, 04-Oct-10
0.020
0.016
0.012
0.008
0.004
0.000
10
70
10
8
6
4
2
0
1
0.0
0
0
V
GS
V
I
D
Source-Drain Diode Forward Voltage
DS
0.2
= 4.5 V
1 0
= 17 A
On-Resistance vs. Drain Current
2 5
= 30 V
V
SD
Q
g
- Source-to-Drain Voltage (V)
T
0.4
2 0
- Total Gate Charge (nC)
I
J
D
= 150 °C
- Drain Current (A)
5 0
Gate Charge
V
GS
0.6
3 0
= 10 V
7 5
0.8
4 0
T
J
= 25 °C
100
1.0
5 0
125
1.2
60
8000
7000
6000
5000
4000
3000
2000
1000
0.04
0.03
0.02
0.01
0.00
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
C
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
I
rss
D
-
= 14.4 A
V
I
D
25
C
GS
1 0
= 14.4 A
oss
= 10 V
2
V
V
DS
GS
0
T
J
- Drain-to-Source V oltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
2 0
Capacitance
25
C
4
iss
50
3 0
Vishay Siliconix
6
75
Si7461DP
4 0
www.vishay.com
100
8
5 0
125
150
10
60
3