VN0300L-P014 Supertex, VN0300L-P014 Datasheet

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VN0300L-P014

Manufacturer Part Number
VN0300L-P014
Description
MOSFET 30V 1.2Ohm
Manufacturer
Supertex
Datasheet

Specifications of VN0300L-P014

Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
0.64 A
Resistance Drain-source Rds (on)
1.2 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Package / Case
TO-92
Minimum Operating Temperature
- 55 C
Power Dissipation
1 W
Factory Pack Quantity
2000
Features
Applications
Ordering Information
-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Distance of 1.6mm from case for 10 seconds.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
VN0300
Device
ISS
and fast switching speeds
Package Option
VN0300L-G
TO-92
N-Channel Enhancement-Mode
Vertical DMOS FET
1235 Bordeaux Drive, Sunnyvale, CA 94089
-55
O
C to +150
300
Value
BV
BV
±30V
DGS
DSS
O
O
C
C
BV
DSS
(V)
30
Pin Configuration
Product Marking
Package may or may not include the following marks: Si or
/BV
General Description
This enhancement-mode (normally-off) transistor utilizes
a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities
of bipolar transistors and the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
DGS
Si V N
YYWW
0 3 0 0 L
Tel: 408-222-8888
SOURCE
R
(max)
YY = Year Sealed
WW = Week Sealed
1.2
DS(ON)
(Ω)
TO-92 (L)
TO-92 (L)
= “Green” Packaging
www.supertex.com
DRAIN
GATE
VN0300
I
(min)
D(ON)
1.0
(A)

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VN0300L-P014 Summary of contents

Page 1

... Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Package Option Device TO-92 VN0300 VN0300L-G -G indicates package is RoHS compliant (‘Green’) Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature ...

Page 2

... 1.0MHz - 25V 1.0A 25Ω GEN 0 0V PULSE GENERATOR OUTPUT R GEN D.U.T. INPUT ● Tel: 408-222-8888 ● www.supertex.com VN0300 θ C/W) O 170 = 10µA = 1.0mA = Max Rating = 30V, = 10V DS = 300mA 500mA D = 630mA ...

Page 3

... Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship ...

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