SI4838DY-T1 Vishay/Siliconix, SI4838DY-T1 Datasheet

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SI4838DY-T1

Manufacturer Part Number
SI4838DY-T1
Description
MOSFET 12V 25A 3.5W
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI4838DY-T1

Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
25 A
Resistance Drain-source Rds (on)
3 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOIC-8 Narrow
Fall Time
70 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
3.5 W
Rise Time
40 ns
Factory Pack Quantity
2500
Tradename
TrenchFET
Typical Turn-off Delay Time
140 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4838DY-T1
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4838DY-T1-E3
Manufacturer:
VISHAY
Quantity:
2 500
Part Number:
SI4838DY-T1-E3
Manufacturer:
NXP
Quantity:
2 500
Part Number:
SI4838DY-T1-E3
Manufacturer:
VISHAY
Quantity:
15 000
Part Number:
SI4838DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71359
S09-0221-Rev. D, 09-Feb-09
Ordering Information: Si4838DY-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
12
(V)
G
S
S
S
Si4838DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
1
2
3
4
0.003 at V
0.004 at V
R
Top View
DS(on)
SO-8
J
a
= 150 °C)
a
GS
GS
(Ω)
= 4.5 V
= 2.5 V
N-Channel 12-V (D-S) MOSFET
a
8
7
6
5
D
D
D
D
a
A
I
D
= 25 °C, unless otherwise noted
25
20
(A)
Steady State
Steady State
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
Symbol
Symbol
T
R
R
J
Available
V
V
I
P
, T
I
DM
thJA
thJF
I
DS
GS
D
S
D
stg
g
Tested
®
Power MOSFETs: 2.5 V Rated
Typical
10 s
2.9
3.5
2.2
25
20
29
67
13
G
N-Channel MOSFET
- 55 to 150
± 8
12
60
Steady State
D
S
Maximum
1.3
1.6
17
13
35
80
16
Vishay Siliconix
1
Si4838DY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI4838DY-T1 Summary of contents

Page 1

... Top View Ordering Information: Si4838DY-T1-E3 (Lead (Pb)-free) Si4838DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) ...

Page 2

... Si4838DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Document Number: 71359 S09-0221-Rev. D, 09-Feb-09 7500 6000 4500 3000 1500 0.015 0.012 0.009 °C J 0.006 0.003 0.000 0.8 1.0 1.2 Si4838DY Vishay Siliconix C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 4 1.4 1.2 1.0 0.8 0 ...

Page 4

... Si4838DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 0.2 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 DIM ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep- ...

Page 6

... TrenchFET Power MOSFETs Mounting LITTLE FOOT Wharton McDaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same ...

Page 7

Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.022 (0.559) Return to Index Return to Index www.vishay.com 22 0.172 (4.369) 0.028 (0.711) 0.050 (1.270) Recommended Minimum Pads Dimensions in Inches/(mm) Document Number: 72606 Revision: 21-Jan-08 ...

Page 8

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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