VN0550N3-P002 Supertex, VN0550N3-P002 Datasheet - Page 2

• Manufacturer Part Number: VN0550N3-P002
• Description: MOSFET 500V 60Ohm
• Manufacturer: Supertex

Specifications of VN0550N3-P002

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 mA
• Resistance Drain-source Rds (on): 60 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1 W
• Factory Pack Quantity: 2000
• Typical Turn-off Delay Time: 10 ns

Notes:
Electrical Characteristics
Switching Waveforms and Test Circuit
Notes:
ΔR
Thermal Characteristics
ΔV
R
BV
V
†
Sym
t
I
C
1.
2.
C
t
C
d(OFF)
I
I
G
V
D(ON)
DS(ON)
d(ON)
Package
GS(th)
GSS
DSS
DS(ON)
t
OSS
GS(th)
RSS
t
t
ISS
SD
rr
FS
r
f
TO-92
DSS
I
D
All D.C. parameters 100% tested at 25
All A.C. parameters sample tested.
(continuous) is limited by max rated T
OUTPUT
INPUT
Parameter
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
Gate body leakage current
Zero gate voltage drain current
On-state drain current
Static drain-to-source on-state
resistance
Change in R
Forward transconductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on time
Rise time
Turn-off time
Fall time
Diode forward voltage drop
Reverse recovery time
Supertex inc.
VDD
10V
0V
0V
(continuous)
10%
(mA)
GS(th)
DS(ON)
50
I
D
t
with temperature
d(ON)
with temperature
10%
t
(ON)
†
90%
t
r
1235 Bordeaux Drive, Sunnyvale, CA 94089
(pulsed)
j
O
.
(mA)
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
250
(T
I
D
A
= 25°C unless otherwise specified)
90%
t
d(OFF)
t
Power Dissipation
(OFF)
t
90%
@T
f
10%
C
Min
500
150
1.0
2.0
(W)
50
= 25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2
O
C
Typ
-3.8
100
350
100
300
1.0
8.0
2.0
0.8
45
40
45
-
-
-
-
-
-
-
-
(
Max
Generator
-5.0
100
O
4.0
1.0
1.7
5.0
125
10
60
55
10
10
15
10
10
C/W)
Tel: [phone]
θ
-
-
-
-
-
-
-
Pulse
jc
INPUT
R
GEN
mV/
mmho
Units
%/
mA
mA
nA
µA
pF
ns
ns
V
V
Ω
V
O
O
(
C
O
C
170
C/W)
θ
ja
Conditions
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
V
I
R
V
V
D
www.supertex.com
GS
GS
GS
GS
GS
DS
GS
GS
GS
GS
GS
GS
DS
GS
DS
DD
GS
GS
GEN
= 150mA,
= 0.8 Max Rating,
= 25V, I
= 25V,
= 0V, I
= V
= V
= ±20V, V
= 0V, V
= 0V, T
= 5.0V, V
= 10V, V
= 5.0V, I
= 10V, I
= 10V, I
= 0V,
= 25V,
= 0V, I
= 0V, I
= 25Ω
DS
DS
(mA)
I
V
, I
, I
50
R
DR
DD
D
SD
SD
L
A
D
D
DS
†
D
D
D
= 1.0mA
D
= 125
DS
= 1.0mA
= 1.0mA
= 500mA
= 500mA
D.U.T.
DS
= 50mA
= 50mA
= 50mA
DS
= Max Rating
= 50mA
OUTPUT
= 25V
= 25V
= 0V
VN0550
O
C
(mA)
250
I
DRM