TN0110N3 Supertex, TN0110N3 Datasheet - Page 3

• Manufacturer Part Number: TN0110N3
• Description: MOSFET 100V 3Ohm
• Manufacturer: Supertex

Specifications of TN0110N3

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.35 A
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Fall Time: 3 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1000 mW
• Rise Time: 3 ns
• Factory Pack Quantity: 1000
• Typical Turn-off Delay Time: 6 ns

Typical Performance Curves
Supertex inc.
0.01
0.5
0.4
0.3
0.2
0.1
5.0
4.0
3.0
2.0
1.0
1.0
0.1
10
0
0
1.0
0
0
TO-92 (pulsed)
TO-92 (DC)
Maximum Rated Safe Operating Area
Transconductance vs. Drain Current
T
C
= 25
10
0.6
O
C
Output Characteristics
10
20
I
1.2
D
V
(amperes)
V
DS
DS
(volts)
(volts)
1.8
30
1235 Bordeaux Drive, Sunnyvale, CA 94089
100
T
T
T
V
V
A
A
A
40
DS
2.4
GS
= -55
= 25
= 150
6V
= 25V
8V
4V
2V
= 10V
O
O
C
O
C
C
1000
50
3.0
3
2.0
1.0
5.0
4.0
3.0
2.0
1.0
1.0
0.8
0.6
0.4
0.2
0
0
0
0.001
0
Power Dissipation vs. Case Temperature
0
TO-92
Thermal Response Characteristics
Tel: [phone]
25
Saturation Characteristics
2.0
0.01
50
4.0
t
p
V
(seconds)
DS
T
C
(volts)
75
(
0.1
O
C)
6.0
www.supertex.com
100
T
V
C
P
GS
= 25
D
TO-92
= 1W
1.0
= 10V
8.0
O
125
C
2V
8V
6V
4V
150
10
10
TN0110