IS42S16100E-7TL-TR ISSI, Integrated Silicon Solution Inc, IS42S16100E-7TL-TR Datasheet - Page 63

• Manufacturer Part Number: IS42S16100E-7TL-TR
• Description: IC SDRAM 16MBIT 143MHZ 50TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S16100E-7TL-TR

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 16M (1M x 16)
• Speed: 143MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 50-TSOPII
• Organization: 1Mx16
• Density: 16Mb
• Address Bus: 12b
• Access Time (max): 6/5.5ns
• Maximum Clock Rate: 143MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 130mA
• Pin Count: 50
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

IS42S16100E, IC42S16100E
Read Cycle / Ping Pong Operation (Bank Switching)
Note 1: A8,A9 = Don’t Care.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. C
01/22/08
A0-A9
DQM
CAS latency = 3, burst length = 2
CKE
RAS
CAS
CLK
A10
A11
WE
DQ
CS
t
CKS
t
CS
T0
t
t
t
t
t
t
t
CS
CS
CS
t
t
AS
AS
AS
CKA
CH
CK
<
BANK 0
ACT 0
ROW
ROW
T1
(BANK 0 TO 1)
t
CHI
>
(BANK 0)
(BANK 0)
(BANK 0)
t
t
t
t
t
t
t
t
RRD
RCD
t
t
AH
AH
RAS
CH
CH
CH
AH
RC
T2
t
CL
T3
<
BANK 1
ROW
ROW
ACT1
T4
>
(BANK 1)
t
RCD
<
AUTO PRE
<
COLUMN
READA 0
NO PRE
READ 0
BANK 0
T5
(1)
>
(BANK 0)
>
t
t
CAC
CS
T6
(BANK 1)
(BANK 1)
t
t
RAS
t
QMD
RC
<
<
AUTO PRE
READA 1
COLUMN
NO PRE
READ 1
BANK 1
T7
(1)
>
>
(BANK 1)
t
AC
t
CAC
t
LZ
BANK 0 OR 1
<
BANK 0
PRE 0
T8
D
OUT
t
>
OH
0m
(BANK 0)
(BANK 0)
t
AC
t
RQL
t
RP
T9
D
OUT
t
OH
0m+1
t
AC
t
BANK 0 OR 1
CH
T10
<
BANK1
PRE 1
D
OUT
t
>
OH
(BANK1)
1m
t
AC
t
RP
<
BANK 0
ACT 0
ROW
ROW
T11
D
OUT
Undefined
Don't Care
t
>
OH
1m+1
(BANK 0)
(BANK 0)
(BANK 0)
t
HZ
t
t
t
RCD
RAS
RC
T12
63