IS62WV1288BLL-55TI ISSI, Integrated Silicon Solution Inc, IS62WV1288BLL-55TI Datasheet - Page 3

• Manufacturer Part Number: IS62WV1288BLL-55TI
• Description: IC SRAM 1MBIT 55NS 32TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS62WV1288BLL-55TI

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (128K x 8)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS62WV1288ALL, IS62WV1288BLL, IS65WV1288BLL
ABSOLUTE MAXIMUM RATINGS
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a
OPERATING RANGE (V
DC ELECTRICAL CHARACTERISTICS
Notes:
1. Undershoot: –1.0V for pulse width less than 10 ns. Not 100% tested.
2. Overshoot: V
TRUTH TABLE
Integrated Silicon Solution, Inc. — www.issi.com —
Rev. E
11/12/08
Symbol
V
V
t
P
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
Range
Commercial
Industrial/A1
Automotive
Symbol
V
V
V
V
I
I
Mode
Not Selected
(Power-down)
Output Disabled
Read
Write
LI
Lo
stg
term
dd
t
oh
oL
Ih
IL
(1)
(2)
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
dd
+ 1.0V for pulse width less than 10 ns. Not 100% tested.
Ambient Temperature
Parameter
Terminal Voltage with Respect to GND
V
Storage Temperature
Power Dissipation
dd
–40°C to +125°C
–40°C to +85°C
WE
0°C to +70°C
Related to GND
X
X
H
H
L
dd
)
CS1
H
X
L
L
L
Test Conditions
I
I
I
I
GND ≤ V
GND ≤ V
oh
oh
oL
oL
(1)
CS2
H
H
H
X
L
= 0.1 mA
= 2.1 mA
= -0.1 mA
= -1 mA
(Over Operating Range)
In
out
OE
X
X
H
X
L
≤ V
IS62WV1288ALL
≤ V
dd
1-800-379-4774
1.65V - 2.2V
1.65V - 2.2V
dd
, Outputs Disabled
I/O Operation
High-Z
High-Z
High-Z
d
d
out
1.65-2.2V
1.65-2.2V
1.65-2.2V
1.65-2.2V
In
2.5-3.6V
2.5-3.6V
2.5-3.6V
2.5-3.6V
–0.2 to V
V
–0.2 to +3.8
–65 to +150
dd
Value
1.0
dd
+0.3
IS62/65WV1288BLL
V
dd
I
sB
Min.
–0.2
–0.2
2.5V - 3.6V
2.5V - 3.6V
2.5V - 3.6V
1.4
2.2
1.4
2.2
–1
–1
—
—
Current
1
I
I
I
cc
cc
cc
, I
sB
I
sB
2
1
, I
sB
Unit
V
V
°C
W
V
V
dd
dd
2
Max.
0.2
0.4
0.4
0.6
—
—
1
1
+ 0.2
+ 0.3
Unit
µA
µA
V
V
V
V
V
V
V
V
3