P4SMA16A R3 Taiwan Semiconductor, P4SMA16A R3 Datasheet - Page 2
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P4SMA16A R3
Manufacturer Part Number
P4SMA16A R3
Description
TVS Diodes - Transient Voltage Suppressors 400W 16V 5% UNIDIR TRANSZORB-TVS
Manufacturer
Taiwan Semiconductor
Datasheet
1.P4SMA180A_R3.pdf
(6 pages)
Specifications of P4SMA16A R3
Rohs
yes
140
120
100
100
100000
0.1
80
60
40
20
10000
10
0
1
1000
100
0.1
0
10
1
TA=25℃
f=1.0MHz
Vsig=50mVp-p
0.5
td
FIG. 1 PEAK PULSE POWER RATING CURVE
FIG. 5 TYPICAL JUNCTION CAPACITANCE
1
tr=10usec
FIG. 3 CLAMPING POWER PULSE WAVEFORM
Peak Value
IPPM
1
V(
tp, PULSE WIDTH, (uS)
BR
), BREAKDOWN VOLTAGE (V)
1.5
10
PULSE WIDTH(td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS to 50% OF IPPM
t, TIME ms
RATINGS AND CHARACTERISTIC CURVES (P4SMA SERIES)
MEASURED at
STAND-OFF
VOLTAGE,Vwm
2
Half Value-IPPM/2
10/1000usec, WAVEFORM
as DEFINED by R.E.A.
10
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG.3
TA = 25℃
100
2.5
VR=0
1000
3
3.5
10000
100
4
125
100
50
40
30
20
10
75
50
25
0
0
1
0
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE
25
50
FIG.2 PULSE DERATING CURVE
T
CURRENT UNIDIRECTIONAL ONLY
A
, AMBIENT TEMPERATURE (
NUMBER OF CYCLES AT 60 Hz
75
100
10
8.3mS Single Half Sine Wave
JEDEC Method
125
Version:H12
150
o
C)
175
200
100