SI1410EDH-T1 Vishay/Siliconix, SI1410EDH-T1 Datasheet - Page 3

• Manufacturer Part Number: SI1410EDH-T1
• Description: MOSFET 20V 3.7A
• Manufacturer: Vishay/Siliconix

Specifications of SI1410EDH-T1

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3.7 A
• Resistance Drain-source Rds (on): 0.07 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Fall Time: 400 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1.56 W
• Rise Time: 400 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 1900 ns

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71409
S10-0935-Rev. B, 19-Apr-10
0.15
0.12
0.09
0.06
0.03
0.00
8
6
4
2
0
5
4
3
2
1
0
0.0
0.0
0
V
I
D
V
DS
On-Resistance vs. Drain Current
= 3.7 A
V
GS
1.5
1.5
GS
1
= 10 V
V
= 1.8 V
DS
= 5 V thru 2 V
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
- Total Gate Charge (nC)
I
D
- Drain Current (A)
Gate Charge
3.0
3.0
2
1.5 V
4.5
4.5
3
1 V
V
V
GS
GS
6.0
= 2.5 V
6.0
4
= 4.5 V
7.5
7.5
5
1000
800
600
400
200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
8
6
4
2
0
0.00
- 50
0
C
rss
On-Resistance vs. Junction Temperature
0.25
- 25
V
I
D
GS
= 3.7 A
4
= 4.5 V
V
V
0.50
DS
GS
T
Transfer Characteristics
0
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
0.75
C
25
Capacitance
oss
8
1.00
C
50
iss
Vishay Siliconix
T
C
= - 55 °C
Si1410EDH
12
1.25
25 °C
75
1.50
www.vishay.com
100
16
125 °C
1.75
125
2.00
20
150
3