IS61LV6416-8KL-TR ISSI, Integrated Silicon Solution Inc, IS61LV6416-8KL-TR Datasheet - Page 11

• Manufacturer Part Number: IS61LV6416-8KL-TR
• Description: IC SRAM 1MBIT 8NS 44SOJ
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LV6416-8KL-TR

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (64K x 16)
• Speed: 8ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-SOJ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IS61LV6416
IS61LV6416L
Integrated Silicon Solution, Inc.
Rev. I
11/22/05
DATA RETENTION SWITCHING CHARACTERISTICS
Note 1:
DATA RETENTION WAVEFORM
Symbol
V
I
t
t
DR
SDR
RDR
DR
Typical values are measured at V
GND
Parameter
V
Data Retention Current
Data Retention Setup Time
Recovery Time
DD
CE
V
V
for Data Retention
DD
DR
DD
t
= 3.0V, T
SDR
Test Condition
See Data Retention Waveform
V
See Data Retention Waveform
See Data Retention Waveform
DD
= 2.0V, CE ≥ V
(CE Controlled)
A
= 25
O
C and not 100% tested.
DD
Data Retention Mode
CE ≥ V
– 0.2V
DD
- 0.2V
Options
IS61LV6416
IS61LV6416L
t
RDR
Min.
2.0
t
—
—
RC
0
Typ.
0.05
0.5
—
—
—
(1)
ISSI
Max.
3.6
1.5
10
—
—
Unit
mA
ns
ns
V
11
®
1
2
3
4
5
6
7
8
9
10
11
12