FDP42AN15A0_Q Fairchild Semiconductor, FDP42AN15A0_Q Datasheet
FDP42AN15A0_Q
Specifications of FDP42AN15A0_Q
Related parts for FDP42AN15A0_Q
FDP42AN15A0_Q Summary of contents
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... Operating and Storage Temperature J STG Thermal Characteristics R Thermal Resistance, Junction to Case, Max Thermal Resistance, Junction to Ambient, Max. JA ©2002 Fairchild Semiconductor Corporation FDP42AN15A0 Rev. C1 ® MOSFET Applications • Consumer Appliances = • Synchronous Rectification • Uninterruptible Power Supply • Micro Solar Inverter ...
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... Drain-Source Diode Characteristics V Source to Drain Diode Voltage SD t Reverse Recovery Time rr Q Reverse Recovered Charge RR Notes: 1: Starting T = 25° 0.2mH 30A ©2002 Fairchild Semiconductor Corporation FDP42AN15A0 Rev. C1 Package Reel Size TO-220 Tube T = 25°C unless otherwise noted C Test Conditions I = 250 ...
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... Figure 3. Normalized Maximum Transient Thermal Impedance 500 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION V = 10V 100 ©2002 Fairchild Semiconductor Corporation FDP42AN15A0 Rev 25°C unless otherwise noted 150 175 125 Figure 2. Maximum Continuous Drain Current vs ...
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... PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX DRAIN CURRENT (A) D Figure 9. Drain to Source On Resistance vs Drain Current ©2002 Fairchild Semiconductor Corporation FDP42AN15A0 Rev 25°C unless otherwise noted C 100 10 s 100 s 10 STARTING T 1ms 10ms DC 1 0.001 100 300 NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6 ...
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... OSS RSS GD 100 1MHz DRAIN TO SOURCE VOLTAGE (V) DS Figure 13. Capacitance vs Drain to Source Voltage ©2002 Fairchild Semiconductor Corporation FDP42AN15A0 Rev 25°C unless otherwise noted C 1 250 1.1 1.0 0.9 120 160 200 - Figure 12 ...
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... Figure 15. Unclamped Energy Test Circuit g(REF) Figure 17. Gate Charge Test Circuit Figure 19. Switching Time Test Circuit ©2002 Fairchild Semiconductor Corporation FDP42AN15A0 Rev DUT 0.01 Figure 16. Unclamped Energy Waveforms gs2 ...
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... The area, in square inches or square centimeters is the top copper area including the gate and source pads. 19.84 26.51 + ------------------------------------ - 0.262 + Area 128 26.51 + --------------------------------- - 1.69 + Area ©2002 Fairchild Semiconductor Corporation FDP42AN15A0 Rev and the application’s ambient never exceeded (EQ 0.1 is (0.645) DM Figure 21 ...
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... Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. ©2002 Fairchild Semiconductor Corporation FDP42AN15A0 Rev. C1 DPLCAP 5 10 ...
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... Fairchild Semiconductor Corporation FDP42AN15A0 Rev. C1 DPLCAP 10 RSLC2 - 6 ESG 8 ...
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... Fairchild Semiconductor Corporation FDP42AN15A0 Rev. C1 JUNCTION th RTHERM1 6 RTHERM2 5 RTHERM3 4 RTHERM4 3 RTHERM5 2 RTHERM6 ...
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... Mechanical Dimensions ©2002 Fairchild Semiconductor Corporation FDP42AN15A0 Rev. C1 TO-220 11 Dimensions in Millimeters www.fairchildsemi.com ...
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... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. 2Cool™ FPS™ AccuPower™ F-PFS™ ® AX-CAP * FRFET BitSiC™ Global Power Resource Build it Now™ ...