SI1913EDH-T1 Vishay/Siliconix, SI1913EDH-T1 Datasheet - Page 4

• Manufacturer Part Number: SI1913EDH-T1
• Description: MOSFET 20V 1.0A
• Manufacturer: Vishay/Siliconix

Specifications of SI1913EDH-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1 A
• Resistance Drain-source Rds (on): 0.49 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Fall Time: 480 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 740 mW
• Rise Time: 480 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 840 ns

Si1913EDH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.05
- 0.10
- 0.15
0.30
0.25
0.20
0.15
0.10
0.05
0.1
0
2
1
- 50
0.01
0
0.1
2
1
10
- 25
-4
0.05
0.2
0.1
Source-Drain Diode Forward Voltage
Duty Cycle = 0.5
0.2
Single Pulse
V
0
SD
T
-
Threshold Voltage
0.4
T
J
S
0.02
J
= 150 °C
o
25
- Temperature (°C)
u
10
c r
e
-3
t -
- o
0.6
50
D
a r
I
Normalized Thermal Transient Impedance, Junction-to-Ambient
n i
D
75
= 100 µA
V
o
0.8
a t l
T
g
100
J
e
10
= 25 °C
(
) V
-2
1.0
125
150
1.2
Square Wave Pulse Duration (s)
10
-1
1.6
1.2
0.8
0.4
0.0
0.01
5
4
3
2
1
0
1
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
0.1
V
GS
- Gate-to-Source Voltage (V)
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
DM
2
JM
1
- T
Time (s)
t
A
1
S10-1054-Rev. B, 03-May-10
= P
t
2
Document Number: 71415
DM
3
10
Z
thJA
thJA
100
t
t
I
1
2
D
(t)
= 0.88 A
= 170 °C/W
4
100
6
0
0
6
5
0
0