IS61C6416AL-12TI-TR ISSI, Integrated Silicon Solution Inc, IS61C6416AL-12TI-TR Datasheet - Page 10

• Manufacturer Part Number: IS61C6416AL-12TI-TR
• Description: IC SRAM 1MBIT 12NS 44TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61C6416AL-12TI-TR

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (64K x 16)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61C6416AL
IS62C6416AL
WRITE CYCLE NO. 3
Notes:
1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write,
2. I/O will assume the High-Z state if OE V
10
WRITE CYCLE NO. 2
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.
ADDRESS
ADDRESS
UB, LB
UB, LB
D
D
OUT
WE
D
OE
CE
OUT
WE
D
OE
CE
IN
IN
LOW
LOW
LOW
IS64C6416AL
IS65C6416AL
(OE is LOW During Write Cycle)
(OE is HIGH During Write Cycle)
t
SA
t
DATA UNDEFINED
SA
DATA UNDEFINED
IH
.
Integrated Silicon Solution, Inc. — www.issi.com —
VALID ADDRESS
t
t
t
t
AW
HZWE
AW
HZWE
VALID ADDRESS
t
t
PWE1
WC
t
t
PWE2
t
WC
t
PBW
PBW
(1)
(1,2)
HIGH-Z
HIGH-Z
t
t
SD
SD
DATA
DATA
IN
IN
VALID
VALID
t
t
HD
HD
t
t
LZWE
LZWE
t
t
HA
HA
UB_CEWR2.eps
UB_CEWR3.eps
ISSI
1-800-379-4774
06/08/05
Rev. B
®