BS250KL-TR1 Vishay/Siliconix, BS250KL-TR1 Datasheet - Page 3

• Manufacturer Part Number: BS250KL-TR1
• Description: MOSFET 60V 0.27A 0.8A
• Manufacturer: Vishay/Siliconix

Specifications of BS250KL-TR1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.27 A
• Resistance Drain-source Rds (on): 6000 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92-3
• Fall Time: 15.5 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 800 mW
• Rise Time: 15.5 ns
• Factory Pack Quantity: 2000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 21 ns

Document Number: 72712
S-40244—Rev. A, 16-Feb-04
For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1000
100
15
12
10
20
16
12
9
6
3
0
1
8
4
0
0.00
0.0
0
V
I
GS
D
Source-Drain Diode Forward Voltage
T
On-Resistance vs. Drain Current
0.3
= 500 mA
J
= 0 V
V
200
= 125_C
0.3
SD
Q
− Source-to-Drain Voltage (V)
g
I
D
0.6
− Total Gate Charge (nC)
V
− Drain Current (mA)
GS
V
Gate Charge
400
0.6
GS
V
= 4.5 V
DS
= 5 V
0.9
= 30 V
600
T
0.9
V
J
T
GS
= −55_C
1.2
J
= 25_C
= 10 V
V
800
1.2
DS
1.5
= 48 V
1000
1.5
1.8
New Product
1.8
1.5
1.2
0.9
0.6
0.3
0.0
40
32
24
16
10
8
0
8
6
4
2
0
−50
0
0
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-Source Voltage
−25
V
GS
TP0610KL/BS250KL
V
5
2
V
T
GS
V
GS
J
DS
0
= 10 V @ 500 mA
= 0 V
− Junction Temperature (_C)
I
D
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
= 200 mA
25
Capacitance
10
4
Vishay Siliconix
50
V
GS
C
15
C
C
6
oss
75
iss
rss
= 4.5 V @ 25 mA
I
D
100
= 500 mA
www.vishay.com
20
8
125
150
25
10
3