TN0610N3 Supertex, TN0610N3 Datasheet - Page 4

• Manufacturer Part Number: TN0610N3
• Description: MOSFET 100V 1.5Ohm
• Manufacturer: Supertex

Specifications of TN0610N3

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.5 A
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Fall Time: 14 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 1000 mW
• Rise Time: 14 ns
• Factory Pack Quantity: 1000
• Typical Turn-off Delay Time: 16 ns

Typical Performance Curves
200
150
100
1.1
1.0
0.9
50
10
0
8
6
4
2
0
-50
0
0
Capacitance vs. Drain-to-Source Voltage
V
BV
DS
DSS
2
= 25V
Transfer Characteristics
10
0
Variation with Temperature
V
V
GS
4
DS
T
(volts)
j
50
20
(
(volts)
O
C)
●
6
1235 Bordeaux Drive, Sunnyvale, CA 94089
f = 1MHz
100
30
(cont.)
8
C
C
RSS
ISS
150
10
40
4
1.4
1.2
1.0
0.8
0.6
10
5
4
3
2
1
0
8
6
4
2
0
-50
0
0
●
V
(th)
Gate Drive Dynamic Characteristics
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On-Resistance vs. Drain Current
and R
V
0.5
2
(th)
0
V
95 pF
@ 1mA
DS
Q (nanocoulombs)
GS
G
I
D
Variation with Temperature
= 5V
1.0
(amperes)
4
V
T
DS
j
50
(
O
= 10V
C)
●
R
DS
1.5
6
www.supertex.com
172 pF
@ 10V, 0.75A
V
100
V
GS
DS
2.0
8
= 10V
= 40V
150
2.5
10
2.0
1.6
1.2
0.8
0.4
0
TN0606