SI4888DY-T1 Vishay/Siliconix, SI4888DY-T1 Datasheet - Page 7

• Manufacturer Part Number: SI4888DY-T1
• Description: MOSFET 30V 16A 3.5W
• Manufacturer: Vishay/Siliconix

Specifications of SI4888DY-T1

• Product Category: MOSFET
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 16 A
• Resistance Drain-source Rds (on): 7 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Fall Time: 10 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 3.5 W
• Rise Time: 10 ns
• Factory Pack Quantity: 2500
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 44 ns

Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
www.vishay.com
22
Return to Index
Return to Index
(0.559)
0.022
Recommended Minimum Pads
Dimensions in Inches/(mm)
(4.369)
0.172
(1.270)
(0.711)
0.050
0.028
Document Number: 72606
Revision: 21-Jan-08