FDN304PZ_Q Fairchild Semiconductor, FDN304PZ_Q Datasheet
FDN304PZ_Q
Manufacturer Part Number
FDN304PZ_Q
Description
MOSFET P-Ch PowerTrench Specified 1.8V
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDN304PZ_Q.pdf
(5 pages)
Specifications of FDN304PZ_Q
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
- 2.4 A
Resistance Drain-source Rds (on)
0.052 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SSOT-3
Fall Time
15 ns
Forward Transconductance Gfs (max / Min)
12 S
Minimum Operating Temperature
- 55 C
Power Dissipation
0.5 W
Rise Time
15 ns
Typical Turn-off Delay Time
40 ns
FDN304PZ
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
2003 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
Battery management
Load switch
Battery protection
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
P-Channel
SuperSOT -3
04Z
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
1.8V
D
TM
specified
G
– Continuous
– Pulsed
FDN304PZ
Device
Parameter
MOSFET
S
T
A
uses
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
–2.4 A, –20 V.
Fast switching speed
ESD protection diode
High performance trench technology for extremely
low R
SuperSOT
power handling capability than SOT23 in the same
footprint
DS(ON)
TM
-3 provides low R
Tape width
G
–55 to +150
8mm
R
R
R
Ratings
DS(ON)
DS(ON)
DS(ON)
–2.4
0.46
–20
–10
250
0.5
75
8
D
= 52 m
= 70 m
= 100 m
DS(ON)
S
@ V
@ V
@ V
March 2003
and 30% higher
GS
GS
FDN304PZ Rev C (W)
GS
3000 units
Quantity
= –4.5 V
= –2.5 V
= –1.8 V
Units
C/W
C/W
W
V
V
A
C
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