SI1917EDH-T1 Vishay/Siliconix, SI1917EDH-T1 Datasheet - Page 4

• Manufacturer Part Number: SI1917EDH-T1
• Description: MOSFET 10V 1.15A
• Manufacturer: Vishay/Siliconix

Specifications of SI1917EDH-T1

• Product Category: MOSFET
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.15 A
• Resistance Drain-source Rds (on): 0.37 Ohms
• Configuration: Dual
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363-6
• Fall Time: 470 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 730 mW
• Rise Time: 470 ns
• Factory Pack Quantity: 3000
• Tradename: TrenchFET
• Typical Turn-off Delay Time: 960 ns

Si1917EDH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.2
0.01
0.1
0.3
0.2
0.1
0.1
0
3
1
2
1
- 50
10
0
-4
0.05
0.2
0.1
Duty Cycle = 0.5
- 25
I
Single Pulse
D
Source-Drain Diode Forward Voltage
0.2
= 100 µA
V
SD
0
0.02
-
Threshold Voltage
10
0.4
S
T
o
J
-3
25
u
- Temperature (°C)
c r
- e
o t
T
0.6
50
D -
J
= 150 °C
a r
n i
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
V
o
0.8
a t l
10
g
T
-2
100
e
J
= 25 °C
(
) V
1.0
125
Square Wave Pulse Duration (s)
150
1.2
10
-1
1
2.0
1.6
1.2
0.8
0.4
0.0
0.01
5
4
3
2
1
0
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
0.1
V
GS
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
0
P
- Gate-to-Source Voltage (V)
DM
JM
- T
2
t
1
A
1
= P
Time (s)
t
2
DM
S10-1054-Rev. B, 03-May-10
Z
Document Number: 71414
thJA
100
thJA
t
t
3
1
2
10
(t)
= 170 °C/W
I
D
= - 1 A
4
100
6
0
0
6
5
0
0