SI4927DY-T1 Vishay/Siliconix, SI4927DY-T1 Datasheet
SI4927DY-T1
Specifications of SI4927DY-T1
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SI4927DY-T1 Summary of contents
Page 1
... stg Symbol sec R R thJA thJA Steady State Si4927DY Vishay Siliconix P-Channel MOSFET Limit Unit – 7.4 5 –2.1 2 1.6 –55 to 150 C Typical ...
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... Si4927DY Vishay Siliconix Parameter Symbol Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge ...
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... 800 On-Resistance vs. Junction Temperature 1 1.4 1.2 1.0 0.8 0 –50 –25 Si4927DY Vishay Siliconix Transfer Characteristics T = 125 – – Gate-to-Source Voltage (V) GS Capacitance C iss C oss C rss – ...
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... Si4927DY Vishay Siliconix Source-Drain Diode Forward Voltage 150 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 0 250 A D 0.6 0.4 0.2 0.0 –0.2 –0.4 –50 – – Temperature ( C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 – ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...