BS107PTSTOA Diodes Inc. / Zetex, BS107PTSTOA Datasheet - Page 3

• Manufacturer Part Number: BS107PTSTOA
• Description: MOSFET -
• Manufacturer: Diodes Inc. / Zetex

Specifications of BS107PTSTOA

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.12 A
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 mW

Normalised R
500
400
300
200
100
0
10
BS107PT
5
0
0
2.4
2.0
1.6
1.2
0.8
0.5
0
Transconductance v drain current
Gate charge v gate-source voltage
0.5
-50
I
0.2
D(On)
-40 -20 0 20 40 60 80
1.0
DS(on)
I
D=
-Drain Current (Amps)
500mA
T-Temperature (°C)
T-Temperature (°C)
1.5
0.4
Q-Charge (nC)
and V
2.0
V
TYPICAL CHARACTERISTICS
DS
2.5
=
0.6
GS(th)
50V 100V
3.0
100
v Temperature
0.8
3.5
180V
120
4.0
V
I
D=
140 150
DS
1.0
-1mA
=
V
V
V
25V
I
4.5
D=
GS
DS
GS=
100mA
=
5V
5.0
3-26
500
400
300
200
100
Transconductance v gate-source voltage
100
0
50
10
500
400
300
200
100
Power v temperature derating curve
Gate charge v gate-source voltage
0
1
0
0
20
V
GS
2
V
T
40
-Gate-Source Voltage (Volts)
GS-
amb
Gate Source Voltage (Volts)
60
- Ambient Temperature (°C)
4
80
100
5
6
120
140
.8
160
10
180
10
20
200
I
500mA
V
250mA
I00mA
25mA
25V
D=
DS
=