ZVN0535ASTZ Diodes Inc. / Zetex, ZVN0535ASTZ Datasheet - Page 2

• Manufacturer Part Number: ZVN0535ASTZ
• Description: MOSFET -
• Manufacturer: Diodes Inc. / Zetex

Specifications of ZVN0535ASTZ

• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 350 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.09 A
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Package / Case: TO-92
• Fall Time: 7 ns
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 700 mW
• Rise Time: 7 ns
• Typical Turn-off Delay Time: 16 ns

20
800
700
600
500
400
300
200
100
16
12
0
8
4
0
100
80
60
40
20
Capacitance v drain-source voltage
Voltage Saturation Characteristics
0
0
0
10
V
V
GS-
DS
Output Characteristics
V
20
2
Gate Source Voltage (Volts)
- Drain Source Voltage (Volts)
DS
10
-Drain Source Voltage (Volts)
30
40
4
20
TYPICAL CHARACTERISTICS
50
60
6
30
70
80
8
40
90
100
10
10V
V
3V
8V
6V
5V
4V
I
250mA
100mA
GS
D=
50
50mA
=
C
C
C
iss
oss
rss
300
400
300
200
100
400
500
200
100
0
150
100
250
200
0
50
0
0
0
Transconductance v drain current
0
V
Saturation Characteristics
1
DS
Transfer Characteristics
- Drain Source Voltage (Volts)
V
2
4
GS-
100
I
D(on)
Gate Source Voltage (Volts)
3
- Drain Current (mA)
4
8
200
5
12
6
300
V
25V
7
DS=
16
8
400
9
20
10
V
10V
3V
500
6V
5V
4V
GS
V
25V
=
DS=